Origin of improved luminescence efficiency after annealing of Ga(In)Nas materials grown by molecular beam epitaxy

Origin of improved luminescence efficiency after annealing of Ga(In)Nas materials grown by molecular beam epitaxy

著者名:

Li, W. ( Tampere Univ .of Technology (Finland) )
Pessa, M.
Ahlgren, T. ( Univ. of Helsinki (finland) )
Dekker, J. ( Helsinki Univ. of Technology (Finland) )

掲載資料名:

Photodetector materials and devices VII : 21-23 January 2002, San Jose, USA

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

4650

発行年:

2002

開始ページ:

207

終了ページ:

212

総ページ数:

6

出版情報:

Bellingham, Wash., USA: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819443892 [0819443891]

言語:

英語

請求記号:

P63600/4650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00012478
シリーズID:	PA00000029
会議名:	Photonics West - Optoelectronic Materials and Devices : Photodetector materials and devices
回次:	2002 : 7th
会議開催地:	San Jose, CA, USA
会議開催年:	2002.01.21-2002.01.23

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