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Determination of subband energy levels from self-excited Raman scattering in compressively strained InGaAs/GaAs quantum well lasers

著者名:
掲載資料名:
Physics and Simulation of Optoelectronic Devices X
シリーズ名:
Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号:
4646
発行年:
2002
開始ページ:
279
終了ページ:
286
総ページ数:
8
出版情報:
Bellingham, Wash.: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819443854 [0819443859]
言語:
英語
請求記号:
P63600/4646
資料種別:
国際会議録

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