Blank Cover Image

(AlGaIn)N ultraviolet LED chips and their use in triphosphor luminescence conversion white LEDs(Invited Paper)

著者名:
Wagner, J. ( Fraunhofer-Institute fuer Angewandte Festkoerperphysik(Germany) )
Kaufmann, U.
Koehler, K.
Kunzer, M.
Pletschen, W.
Obloh, H.
Schlotter, P.
Stephan, T.
Walcher, H.
Ellens, A. ( OSRAM Opto Semiconductors GmbH(Germany) )
Rossner, W. ( Siemens AG(Germany) )
Kobusch, M.
さらに 7 件
掲載資料名:
Light-Emitting Diodes: Research, Manufacturing, and Applications VI
シリーズ名:
Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号:
4641
発行年:
2002
開始ページ:
50
終了ページ:
59
総ページ数:
10
出版情報:
Bellingham, Wash.: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819443809 [0819443808]
言語:
英語
請求記号:
P63600/4641
資料種別:
国際会議録

類似資料:

1 国際会議録 Influence of Mg doping profile on the electroluminescence properties of GaInN multiple-quantum-well light-emitting diodes

Stephan, T., Koehler, K., Maier, M., Kunzer, M., Schlotter, P., Wagner, J.

SPIE - The International Society of Optical Engineering
7 国際会議録 LEDs on diamond (Invited Paper)

Fahrner,W.R., Zaitsev,A.M., Melnikov,A.A., Denisenko,A.V., Job,R., Lee,S.T.

SPIE-The International Society for Optical Engineering
2 国際会議録 (AlGaIn)N UV LEDs for integrated metal-oxide based ozone sensors

J. Wagner, Ch. Y. Wang, C.-C. Röhlig, M. Maier, M. Kunzer

Society of Photo-optical Instrumentation Engineers
8 国際会議録 Resonant Raman Scattering in GaN/Al0.15Ga0.85N and InyGa1-yN/GaN/AlxGa1-xN Heterostructures

Behr, D., Niebuhr, R., Obloh, H., Wagner, J., Bachem, K. H., Kaufmann, U.

MRS - Materials Research Society
3 国際会議録 Hybrid integrated optical receivers for high-speed data transmission (Invited Paper)

Leich, M., Hurm, V., Berger, J., Dietrich, E., Sohn, J., Leuther, A., Bronner, W., Koehler, K., Loesch, R., Walcher, H., …

SPIE-The International Society for Optical Engineering
9 国際会議録 lnAs/Ga1-xInxSb infrared superlattice photodiodes for infrared detection (Invited Paper)

Fuchs,F., Weimar,U., Ahlswede,E., Pletschen,W., Schmitz,J., Walther,M.

SPIE-The International Society for Optical Engineering
4 国際会議録 Composition Dependence of the Bandgap Energy of InxGa1-xN Layers on GaN (x｡？.15) Grown by Metalorganic Chemical Vapor Deposition

Wagner, J., Ramakrishnan, A., Behr, D., Maier, M., Herres, N., Kunzer, M., Obloh, H., Bachem, K-H.

MRS - Materials Research Society
10 国際会議録 Light Generating Carrier Recombination and Impurities in Wurtzite GaN/Al2O3 Grown by MOCVD

Kaufmann, U., Kunzer, M., Merz, C., Akasaki, I., Amano, H.,

MRS - Materials Research Society
5 国際会議録 Issues in the manufacturing of AlInGaN-based LED chips (Invited Paper)

Liu, H., Yan, C., Wang, W., Chern, C., So, W.W., Ma, K., Wang, M.

SPIE-The International Society for Optical Engineering
11 国際会議録 Deep-ultraviolet LEDs fabricated in AllnGaN using MEMOCVD (Invited Paper)

Khan, M. A.

SPIE - The International Society of Optical Engineering
6 国際会議録 (AlGaIn)(AsSb) quantum well diode lasers with improved beam quality (Invited Paper)

Wagner, J., Geerlings, E., Kaufel, G., Keleman, M.T., Manz, C., Pfahler, C., Rattunde, M., Schmitz, J.

SPIE - The International Society of Optical Engineering
12 国際会議録 Bichromatic to polychromatic photo-conversion LEDs (Invited Paper) [5941-04]

Kennedy, W. D., Bretschneider, E. C.

SPIE - The International Society of Optical Engineering
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12