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Silicon direct bonding approach to high voltage power device (insulated gate bipolar transistors)

著者名:
掲載資料名:
Advances in microelectronic device technology : 7-9 November 2001, Nanjing, China
シリーズ名:
Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号:
4600
発行年:
2001
開始ページ:
88
終了ページ:
95
総ページ数:
8
出版情報:
Bellingham, Wash.: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819443397 [0819443395]
言語:
英語
請求記号:
P63600/4600
資料種別:
国際会議録

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