Alternating PSM defect printability at 193-nm wavelength
- 著者名:
- Lin,C.-C. ( International SEMATECH Inc. )
- Kim,Y.-S.
- Kimmel,K.R.
- 掲載資料名:
- 21st Annual BACUS Symposium on Photomask Technology
- シリーズ名:
- Proceedings of SPIE - the International Society for Optical Engineering
- シリーズ巻号:
- 4562
- 発行年:
- 2001
- 巻:
- 4562
- パート:
- Two of Two Parts
- 開始ページ:
- 1121
- 終了ページ:
- 1125
- 総ページ数:
- 5
- 出版情報:
- Bellingham, Wash.: SPIE-The International Society for Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819442901 [0819442909]
- 言語:
- 英語
- 請求記号:
- P63600/4562
- 資料種別:
- 国際会議録
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SPIE-The International Society for Optical Engineering |
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3
国際会議録
Optimization of alternating PSM mask process for 65-nm poly-gate patterning using 193-nm lithography
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4
国際会議録
KrF attenuated PSM defect printability and detectability for 120-nm actual DRAM patterning process
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国際会議録
Novel Si-based composite thin films for 193/157-nm attenuated phase-shift mask (APSM) applications
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