Challenge for sub-100-nm DRAM gate printing using ArF lithography with combination of moderate OAI and attPSM

Challenge for sub-100-nm DRAM gate printing using ArF lithography with combination of moderate OAI and attPSM

著者名:

Kim,Y.-C. ( Samsung Electronics Co., Ltd. )
Vandenberghe,G.N.
Verhaegen,S.
Ronse,K.

掲載資料名:

21st Annual BACUS Symposium on Photomask Technology

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

4562

発行年:

2001

巻:

4562

パート:

Two of Two Parts

開始ページ:

954

終了ページ:

967

総ページ数:

14

出版情報:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819442901 [0819442909]

言語:

英語

請求記号:

P63600/4562

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00012276
シリーズID:	PA00000029
会議名:	SPIE Photomask Technology : Annual BACUS Symposium on Photomask Technology
回次:	2001 : 21st
会議開催地:	Monterey, CA, USA
会議開催年:	2001.10.03-2001.10.05

類似資料:

1 国際会議録 ArF lithography options for 100-nm technologies Vandenberghe,G.N., Kim,Y.-C., Delvaux,C., Lucas,K.D., Choi,S.-J., Ercken,M., Ronse,K., Vleeming,B. SPIE-The International Society for Optical Engineering	7 国際会議録 Process optimization for sub-100-nm gate patterns using phase edge lithography Schenau,K.van Ingen, Vleeming,B., Ansem,W.F.Gehoel-van, Wong,P., Vandenberghe,G.N. SPIE-The International Society for Optical Engineering
2 国際会議録 (Sub-) 100-nm gate patterning using 248-nm alternating PSM Vandenberghe,G.N., Jaenen,P., Jonckheere,R.M., Ronse,K., Toublan,O. SPIE-The International Society for Optical Engineering	8 国際会議録 0.33-k1 ArF lithography for 100-nm DRAM Bok, C.K., Kim, S.-K., Kim, H.-B., Oh, J.-S., Ahn, C.-N., Shin, K.-S. SPIE-The International Society for Optical Engineering
3 国際会議録 Reticle quality needs for advanced 193-nm lithography Jonckheere,R.M., Vandenberghe,G.N., Wiaux,V., Verhaegen,S., Ronse,K. SPIE-The International Society for Optical Engineering	9 国際会議録 Performance optimization of the double-exposure slternating PSM for (sub-) 100-nm ICs Vandenberghe,G.N., Driessen,F., Adrichem,P.J.van, Ronse,K., Li,J., Karklin,L. SPIE-The International Society for Optical Engineering
4 国際会議録 Printing 100-nm and sub-100-nm DRAM full-chip patterns with crosspole illumination in 0.63-NA ArF lithography Kim, S.-K., Bok, C.-K., Shin, K.-S. SPIE-The International Society for Optical Engineering	10 国際会議録 Model-based OPC for first-generation 193-nm lithography Lucas,K.D., Word,J.C., Vandenberghe,G.N., Verhaegen,S., Jonckheere,R.M. SPIE-The International Society for Optical Engineering
5 国際会議録 Feasibility study of printing sub-100-nm with ArF lithography Kim,S.-K., Hong,J.-G., Park,J.-O., Yoo,T.-J., Hyun,Y.-S., Bok,C.-K., Shin,K.-S. SPIE-The International Society for Optical Engineering	11 国際会議録 Validation of ArF chromeless PSM in the sub-100-nm node DRAM cell Lee, J.-H., Chung, D.-H., Cha, D.-C., Kim, H.-S., Park, J.-S., Nam, D.-G., Woo, S.-K., Cho, H.-S., Han, W.-S. SPIE-The International Society for Optical Engineering
6 国際会議録 AttPSM CD control: mask bias and flare effects Kim. Y.-C., Vandenberghe, G., Ronse, K. SPIE-The International Society for Optical Engineering	12 国際会議録 Evaluation of ArF CLM in the sub-100-nm DRAM cell Lee, J.-H., Chung, D.-H., Kim, H.-C., Nam, D.-S., Woo, S.-G., Cho, H.-K., Han, W.-S. SPIE-The International Society for Optical Engineering

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