White light-emitting diodes with phase-separated InGaN active layers
- 著者名:
Moon,Y.-T. ( Kwangju Institute of Science and Technology ) Kim,D.-J. Park,J.-S. Oh,J.-T. Park,N.-M. Kim,T.-S. Park,S.-J. - 掲載資料名:
- Solid state lighting and displays : 31 July-1 August 2001, San Diego, USA
- シリーズ名:
- Proceedings of SPIE - the International Society for Optical Engineering
- シリーズ巻号:
- 4445
- 発行年:
- 2001
- 開始ページ:
- 93
- 終了ページ:
- 98
- 総ページ数:
- 6
- 出版情報:
- Bellingham, Wash., USA: SPIE-The International Society for Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819441591 [0819441597]
- 言語:
- 英語
- 請求記号:
- P63600/4445
- 資料種別:
- 国際会議録
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5
国際会議録
Phosphor-free white light-emitting diode using InGaN/GaN multiple quantum wells grown on microfacets
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