Optical properties of GaN layers grown by MOCVD

Optical properties of GaN layers grown by MOCVD

著者名:

Kudrawiec,R. ( Wroclaw Univ. of Technology )

掲載資料名:

International Conference on Solid State Crystals 2000 : Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, 9-13 October, 2000, Zakopane, Poland

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

4413

発行年:

2000

開始ページ:

37

終了ページ:

40

総ページ数:

4

出版情報:

Bellingham, Wash., USA: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819441164 [0819441163]

言語:

英語

請求記号:

P63600/4413

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00012128
シリーズID:	PA00000029
会議名:	International Conference on Solid State Crystals
回次:	2000
会議開催地:	Zakopane, Poland
会議開催年:	2000.10.09-2000.10.13

類似資料:

1 国際会議録 Optical studies of MOVPE-grown GaN Layers Ciorga,M., Jezierski,K., Bryja,L., Misiewicz,J., Paszkiewicz,R., Korbutowicz,R., Panek,M., Paszkiewicz,B., … SPIE - The International Society for Optical Engineering	7 国際会議録 LBIC investigation of the dynamic behavior of trapping-recombination centers Paszkiewicz,B., Romanowski,A., Paszkiewicz,R., Panek,M., Tlaczala,M.J., Andrzejewski,P. SPIE-The International Society for Optical Engineering
2 国際会議録 Photoluminescence of GaAs grown by liquid phase epitaxy from Bi solution Ciorga,M., Bryja,L., Misiewicz,J., Paszkiewicz,R., Panek,M., Paszkiewicz,B., Tlaczala,M. J. SPIE-The International Society for Optical Engineering	8 国際会議録 Photoreflectance investigation of δ-doped MOVPE-grown AlxGa1-xAs layers Nowaczyk-Utko,M., Sek,G., Misiewicz,J., Sciana,B., Radziewicz,D., Tlaczala,M.J. SPIE-The International Society for Optical Engineering
3 国際会議録 Photoreflectance and photoluminescence of InGaAs/GaAs structures Misiewicz,J., Ciorga,M., Sek,G., Bryja,L., Radziewicz,D., Korbutowicz,R., Panek,M., Tlaczala,M. J. SPIE-The International Society for Optical Engineering	9 国際会議録 Nonlinear optical characterization of GaN layers grown by MOCVD on sapphire Tiginyanu, I. M., Kravetsky, I. V., Pavlidis, D., Eisenbach, A., Hildebrandt, R., Marowsky, G., Hartnagel, H. L. MRS-Materials Research Society
4 国際会議録 Application of GaN laterally overgrown on sapphire Paszkiewicz,R., Korbutowicz,R., Paszkiewicz,B., Radziewicz,D., Kozlowski,J., Tlaczala,M.J. SPIE-The International Society for Optical Engineering	10 国際会議録 Optical studies of amorphous and polycrystalline Zn3P2 Bryja,L., Ciorga,M., Jezierski,K., Bohdziewicz,A., Misiewicz,J. SPIE - The International Society for Optical Engineering
5 国際会議録 Growth of high-quality GaN and Al.Ga1.N Layers by an MOVPE technique Paszkiewicz,R., Korbutowicz,R., Radziewicz,D., Panek,M., Paszkiewicz,B., Koztowski,J., Boratyrtski,B., Ttaczata,M.J. SPIE - The International Society for Optical Engineering	11 国際会議録 Structural and Optical Properties of AlGaN/GaN Quantum-Well Structures Grown by MOCVD on Sapphire Niebuhr, R., Bachem, K. H., Behr, D., Hoffmann, C., Kaufmann, U., Lu, Y., Santic, B., Wagner, J., Arlery, M., Rouviere, … MRS - Materials Research Society
6 国際会議録 Observation of the new lines in photoluminescence from MOCVD-grown GaAs Ciorga,M., Misiewicz,J., Tlaczala,M. J., Panek,M., Veje,E. SPIE-The International Society for Optical Engineering	12 国際会議録 Investigation of The Surface Polarity, Defects, Electrical And Optical Properties of GaN Grown by MBE, MOCVD, And HVPE * Visconti, P., Jones, K.M., Reshchikov, M.A., Yun, F., Morkoc, H., Molnar, R.J., Passaseo, A., Cingolani, R., Park, S.S., … Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12