Monolithic integration of GaInAs/InP quantum well infrared photodetectors on Si substrate

Monolithic integration of GaInAs/InP quantum well infrared photodetectors on Si substrate

著者名:

Erdtmann,M. ( Northwestern Univ. )
Razeghi,M.

掲載資料名:

Photodetectors : materials and devices VI : 22-24 January 2001, San Jose, USA

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

4288

発行年:

2001

開始ページ:

163

終了ページ:

170

総ページ数:

8

出版情報:

Bellingham, Wash., USA: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819439666 [0819439665]

言語:

英語

請求記号:

P63600/4288

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00012004
シリーズID:	PA00000029
会議名:	Photonics West - Optoelectronic Materials and Devices : Photodetectors : Materials and Devices
回次:	2001 : 6th
会議開催地:	San Jose, CA, USA
会議開催年:	2001.01.22-2001.01.24

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