Quantum dot intersubband photodetectors

Quantum dot intersubband photodetectors

著者名:

Jelen,C.L. ( Northwestern Univ. )
Erdtmann,M.
Kim,S.
Razeghi,M.

掲載資料名:

Photodetectors : materials and devices VI : 22-24 January 2001, San Jose, USA

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

4288

発行年:

2001

開始ページ:

141

終了ページ:

150

総ページ数:

10

出版情報:

Bellingham, Wash., USA: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819439666 [0819439665]

言語:

英語

請求記号:

P63600/4288

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00012004
シリーズID:	PA00000029
会議名:	Photonics West - Optoelectronic Materials and Devices : Photodetectors : Materials and Devices
回次:	2001 : 6th
会議開催地:	San Jose, CA, USA
会議開催年:	2001.01.22-2001.01.24

類似資料:

1 国際会議録 High-responsivity GaInAs/InP quantum well infrared photodetectors grown by low-pressure metalorganic chemical vapor deposition Erdtmann,M., Matlis,A.W., Jelen,C.L., Razeghi,M., Brown,C.J. SPIE - The International Society for Optical Engineering	7 国際会議録 GaInAs/InP quantum well infrared photodetectors grown on Si substrates Razeghi,M., Jiang,J., Jelen,C.L., Brown,G.J. SPIE-The International Society for Optical Engineering
2 国際会議録 Quantum well infrared photodetector (λ=3-20 μm) focal plane arrays: monollthic integration with Si-based readout-integrated circultry for low cost and high … Razeghi,M., Erdtmann,M., Jelen,C.L., Diaz,J., Guastavinos,F., Brown,G.J., Park,Y.S. SPIE-The International Society for Optical Engineering	8 国際会議録 Monolithic integration of GaInAs/InP quantum well infrared photodetectors on Si substrate Erdtmann,M., Razeghi,M. SPIE-The International Society for Optical Engineering
3 国際会議録 Growth and optimization of GaInAsP/InP material system for quantum well infrared photodetector applications Erdtmann,M., Jiang,J., Matlis,A.W., Tahraoui,A., Jelen,C.L., Razeghi,M., Brown,G.J. SPIE - The International Society for Optical Engineering	9 国際会議録 Very long wavelength GaAs/GaInP quantum well infrared photodetectors Jelen,C., Slivken,S., Brown,G.J., Razeghi,M. SPIE-The International Society for Optical Engineering
4 国際会議録 GaAs/GaInP Quantum-Well Intersubband Photodetectors for Focal Plane Array Infrared Imaging Jelen, C., Slivken, S., Brown, G. J., Razeghi, M. MRS - Materials Research Society	10 国際会議録 Growth and Characterization of BRS GaInAsP-GaAs Laser Emitting at 0.8ｦﾌm by Gas-Source Molecular Beam Epitaxy Jelen, C., Slivken, S., Diaz, J., Erdtmann, M., Kim, S., Wu, D., Razeghi, M. MRS - Materials Research Society
5 国際会議録 Characterization of self-assembled InGaAs/InGaP quantum dot mid-infrared photoconductive detectors grown by low-pressure MOCVD Kim,S., Erdtmann,M., Razeghi,M. SPIE - The International Society for Optical Engineering	11 国際会議録 Multicolor 4- to 20-ｦﾌm InP-based quantum well infrared photodetectors Jelen,C., Slivken,S., Brown,G.J., Razeghi,M. SPIE - The International Society for Optical Engineering
6 国際会議録 Characterization of a p-Doped GaAs/Ga0.51In0.49P Quantum Well Intersubband Photodetector Hoff, J., Kim, S., Erdtmann, M., Williams, R., Piotrowski, J., Bigan, E., Razeghi, M., Brown, G.J. Electrochemical Society	12 国際会議録 Responsivity and noise performance of InGaAs/InP quantum well infrared photodetectors Jelen,C., Slivken,S., David,T., Brown,G.J., Razeghi,M. SPIE-The International Society for Optical Engineering

1

2

3

4

5

6

7

8

9

10

11

12