High-power long-wavelength lasers using GaAs-based quantum dots

High-power long-wavelength lasers using GaAs-based quantum dots

著者名:

Ledentsov,N.N. ( Technische Univ. Berlin )

掲載資料名:

In-Plane Semiconductor Lasers V

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

4287

発行年:

2001

開始ページ:

71

終了ページ:

82

総ページ数:

12

出版情報:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819439659 [0819439657]

言語:

英語

請求記号:

P63600/4287

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00012003
シリーズID:	PA00000029
会議名:	Photonics West - Optoelectronic Materials and Devices : In-plane semiconductor lasers
回次:	2001 : 5th
会議開催地:	San Jose, CA, USA
会議開催年:	2001.01.22-2001.01.23

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4 国際会議録 Long-wavelength (1.3-1.5 micron) quantum dot lasers based on GaAs Kovsh, A.R., Ledentsov, N.N., Mikhrin, S.S., Zhukov, A.E., Livshits, D.A., Maleev, N.A., Maximov, M.V., Ustinov, V.M., … SPIE - The International Society of Optical Engineering	10 国際会議録 MBE growth of low-threshold long-wavelength QD lasers on GaAs substrates Maleev, N.A., Kovsh, A.R., Zhukov, A.E., Mikhrin, S.S., Vasil'ev, A.V., Semenova, E.S., Shernyakov, Yu.M., Nikitina, … SPIE-The International Society for Optical Engineering
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