Blank Cover Image

Analytical model for subthreshold current in short-channel fully depleted SOI MOSFETs incorporating velocity overshoot

著者名:
掲載資料名:
Design, modeling, and simulation in microelectronics : 28-30 November 2000, Singapore
シリーズ名:
Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号:
4228
発行年:
2000
開始ページ:
259
終了ページ:
269
総ページ数:
11
出版情報:
Bellingham, Wash.: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819439000 [0819439002]
言語:
英語
請求記号:
P63600/4228
資料種別:
国際会議録

類似資料:

1 国際会議録 Analytical Modelling of Threshold Voltage and Drain Current in Short Channel Fully Depleted Cylindrical Gate MOSFET

Gupta,P.S., Kranti,Abhinav, Haldar,S.

SPIE - The International Society for Optical Engineering
7 国際会議録 Hot carrier degradation of fully depleted SIMOX MOSFETs

Sinha, S P, Ii, F D, loonnou, D E, Jenkins, W C, Hughes, H L, Lin, M S

Electrochemical Society
2 国際会議録 A Fully Analytical Continuous Model for Graded-Channel SOI MOSFET for Analog Applications

Souza, M., Pavanello, M. A., Iniguez, B., Flandre, D.

Electrochemical Society
8 国際会議録 Study of Self-Heating Effect on Device Performance of Sub-0.1um SOI MOSFETs Including Velocity Overshoot

Kawanaka, S., Matsuzawa, K., Inoh, K., Katsumata, Y., Yoshimi, M., Ishiuchi, H.

Electrochemical Society
3 国際会議録 Noise modeling and performance in 0.1 5-μm fully depleted SOI MOSFET

Pailloncy, G., Ihiguez, B., Dambrine, G., Dehan, M., Raskin, J.-P., Matsuhashi, H., Delatte, P., Danneville, F.

SPIE - The International Society of Optical Engineering
9 国際会議録 N. DHalleweyn, J. Benson. M. Swanenbeig, W. Redman-Whizc A New Fully-Depleted SOI MOSFET Macro-Model Valid from DC to RF

Raskin, B. Inilguez. J.P., Demeus, L., Neve, A., Goffioul, M., Simon, P., Vanhoenacker, D., Flandre, D.

Electrochemical Society
4 国際会議録 Diffusion current and thermal noise in short-channel MOSFETs

Obrecht,M.S., Manku,T.

SPIE-The International Society for Optical Engineering
10 国際会議録 Temperature dependence of drain-induced barrier lowering in fully depleted SOI MOSFETs

Jomaah, J, Ghibaudo, G, Pelloie, J L, Balestra, F

Electrochemical Society
5 国際会議録 Compact physical modeling of fully depleted SOI MOSFET [6260-62]

Zebrev, I. G., Gorbunov, S. M.

SPIE - The International Society of Optical Engineering
11 国際会議録 Quasi-three-dimensional device simulation of fully depleted MOSFET/SOI focused on surface roughness

Nakao, M., likawa, H., Izumi, K.

Electrochemical Society
6 国際会議録 A New Analytical 2-D Potential Distribution Model in Subthreshold Region including DIBL in Short Channel MOSFET

Manju Pruthi, Gupta,R.S.

Narosa Publishing House
12 国際会議録 Nature of high-temperature charge instability of fully depleted SOI MOSFETs

Nazarov, A.N., Lysenko, V.S., Colinge, J.P., Flandre, D.

Electrochemical Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12