Silicon Defect characterization by High Resolution Laplace Deep Level Transient Spectroscopy

Silicon Defect characterization by High Resolution Laplace Deep Level Transient Spectroscopy

著者名:

Peaker,A.R.

掲載資料名:

High Purity Silicon VI : proceedings of the sixth International Symposium

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

4218

発行年:

2000

開始ページ:

549

終了ページ:

560

総ページ数:

12

出版情報:

Pennington, N.J. — Bellingham, Wash.: Electrochemical Society — SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9781566772846 [1566772842]

言語:

英語

請求記号:

P63600/4218

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00011937
シリーズID:	PA00000029
会議名:	Internationa Symposium on High Purity Silicon [ SPIE 0819438901 ] : Meeting of the Electrochemical Society
回次:	6th : 198th
会議開催地:	Phoenix, AZ, USA
会議開催年:	2000.10.22-2000.10.27

類似資料:

1 国際会議録 Silicon Defect characterization by High Resolution Laplace Deep Level Transient Spectroscopy* Peaker, A.R., Dobaczewski, L., Andersen, O., Rubaldo, L., Hawkins, I.D., Bonde Nielsen, K., Evans-Freeman, J.H. Electrochemical Society	7 国際会議録 EPR Experiments on Hydrogen-Implanted Silicon Crystals:Annealing Properties of Bond Center Hydrogen Nielsen,B.Bech, Nielsen,K.Bonde, Byberg,J.R. Trans Tech Publications
2 国際会議録 High resolution Laplace deep level transient spectroscopy a new tool to study implant damage in silieon Peaker, A.R., Evans-Freemann, J.-H., Dobaczewski, L., Markevich, V., Andersen, O., Rubaldo, L., Kan, P.Y.Y., Hawkins, … Electrochemical Society	8 国際会議録 Low-temperature migration of hydrcgen and iuteractioll with oxygen Nielsen,K.Bonde, Nielsen,B.Bech, Hansen,J. Trans Tech Publications
3 国際会議録 Traciing diffusion by Laplace deep-level spoctroscopy Nielsen,K.Bonde, Dorbetczewski,L. Trans Tech Publications	9 国際会議録 High Resolution DLTS Studies of Transition-Metal-Related Defects in Silicon Dobaczewski,L., Kaminski,P., Kozlowski,R., Surma,M. Trans Tech Publications
4 国際会議録 Tin Related Defect in Electron Irradiated n-Type Silicon Studied by DLTS Nielsen,J., Nielsen,K.Bonde, Larsen,A.Nylandsted Trans Tech Publications	10 国際会議録 Characterization of deep levels in oxygen-implanted silicon wafers by capacitance deep level transient spectroscopy Kang, H.S., Ahn, C.G., Lee, S.H., Kim, K.I., Kang, B.K., Bae, Y.H., Kwon, Y.K. Electrochemical Society
5 国際会議録 Laplace transform DLTS studies of the DX centers in GaSb and AlGaAs Dobaczewski,L., Hawkins,I.D., Kaczor,P., Missous,M., Poole,I., Peaker,A.R. Trans Tech Publications	11 国際会議録 Donor-Like Deep Level Defects in GaN Characterized by Double-Correlation Deep Level Transient Spectroscopy Ahoujja, Mo, Hogsed, M., Yeo, Y. K., Hengehold, R. L. Materials Research Society
6 国際会議録 Identification of VH in silicon by EPR Johannesen,P., Byberg,J.R., Nielsen,B.Bech, Stallinga,P., Nielsen,K.Bonde Trans Tech Publications	12 国際会議録 Characterization of Deep Levels in High-Resistive 6H-SiC by Current Deep Level Transient Spectroscopy M. Kato, K. Kito, M. Ichimura Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12