Gate oxide Integrity Response as a Function of Near the Surface Crystal Defects Morphology
- 著者名:
Borionetti,G. Godio,P. Bonoli,F. Cornara,M. Orizio,R. Falster,R. - 掲載資料名:
- High Purity Silicon VI : proceedings of the sixth International Symposium
- シリーズ名:
- Proceedings of SPIE - the International Society for Optical Engineering
- シリーズ巻号:
- 4218
- 発行年:
- 2000
- 開始ページ:
- 456
- 終了ページ:
- 466
- 総ページ数:
- 11
- 出版情報:
- Pennington, N.J. — Bellingham, Wash.: Electrochemical Society — SPIE-The International Society for Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9781566772846 [1566772842]
- 言語:
- 英語
- 請求記号:
- P63600/4218
- 資料種別:
- 国際会議録
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5
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Impact of silicon substrate oxygen precipitation fine tuning on high density memories retention time
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