Scaling considerations for MOSFET devices with 25-nm channel lengths
- 著者名:
- Saga,S.K.
- 掲載資料名:
- Challenges in process integration and device technology : 18-19 September 2000, Santa Clara, USA
- シリーズ名:
- Proceedings of SPIE - the International Society for Optical Engineering
- シリーズ巻号:
- 4181
- 発行年:
- 2000
- 開始ページ:
- 210
- 終了ページ:
- 219
- 総ページ数:
- 10
- 出版情報:
- Bellingham, Wash., USA: SPIE-The International Society for Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819438423 [0819438421]
- 言語:
- 英語
- 請求記号:
- P63600/4181
- 資料種別:
- 国際会議録
類似資料:
SPIE - The International Society for Optical Engineering |
Materials Research Society |
SPIE - The International Society for Optical Engineering |
Trans Tech Publications |
3
国際会議録
Enhanced Short-Channel Effects of Sub-50 nm Gate Length MOSFETs with High-k Gate Insulator Films
Electrochemical Society |
SPIE-The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering |
Electrochemical Society |
5
国際会議録
Optimization and Realization of Sub 100nm Channel Length Lateral Asymmetric Channel P-MOSFETS
SPIE - The International Society for Optical Engineering |
Kluwer Academic Publishers |
Electrochemical Society |
Electrochemical Society |