Characteristics of deep centers observed in n-GaN grown by reactive molecular beam epitaxy

Characteristics of deep centers observed in n-GaN grown by reactive molecular beam epitaxy

著者名:

掲載資料名:

GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

595

発行年:

2000

開始ページ:

W11.84.1

出版情報:

Warrendale, Pa.: MRS-Materials Research Society

ISSN:

02729172

ISBN:

9781558995031 [155899503X]

言語:

英語

請求記号:

M23500/595

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00020895
シリーズID:	PA00000011
会議名:	Symposium on GaN and Related Alloys
回次:	1999
会議開催地:	Boston, Massachusetts, USA
会議開催年:	1999.11.28-1999.12.03

類似資料:

1 国際会議録 Characteristics of Deep Traps in Freestanding GaN Fang, Z-Q., Look, D.C., Visconti, P., Lu, C., Wang, D., Morkoc, H., Park, S.S., Lee, K.Y. Materials Research Society	7 国際会議録 Raman Studies on Oxygen Doped GaN Grown by Molecular Beam Epitaxy Papadimitriou, D., Ptak, A.J., Korakakis, D., Giles, N.C., Myers, T.H. Materials Research Society
2 国際会議録 Growth and Characterization of High Quality Epitaxial GaN on ZnO(0001)by Reactive Molecular Beam Epitaxy Hamdani,F., Yeadon,M., Smith,D.J., Tang,H., Kim,W., Salvador,A., Botchkarev,A.E., Gibson,J.M., Morkoc,H. Trans Tech Publications	8 国際会議録 Effect of Growth Conditions on Electronic and Structural Properties of GZO Films Grown by Plasma-enhanced Molecular Beam Epitaxy on p-GaN(0001)/Sapphire … H.Y. Liu, V. Avrutin, N. Izyumskaya, M.A. Reshchikov, S. Wolgast, C. Kurdak, A.B. Yankovich, A. Kvit, P. Voyles, Ü. … Materials Research Society
3 国際会議録 Raman Scattering and Photoluminescence of Mg-Doped GaN Films Grown by Molecular-Beam Epitaxy Popovici, G., Xu, G. Y., Botchkarev, A., Kim, W., Tang, H., Salvador, A., Strange, R., White, J. O., Morkoc, H. MRS - Materials Research Society	9 国際会議録 Photoluminescence Study of Defects in GaN Grown by Molecular Beam Epitaxy Reshchikov, Michael A., Zhang, Manhong H., Cui, Jie, Visconti, Paolo, Yun, Feng, Morkoc, Hadis Materials Research Society
4 国際会議録 Photoluminescence Of GaN Grown By Molecular Beam Epitaxy On Freestanding GaN Template Reshchikov, M.A., Yun, F., Huang, D., He, L., Morkoc, H., Park, S.S., Lee, K.Y. Materials Research Society	10 国際会議録 Low Resistance Ohmic Contact on p-type GaN Grown by Plasma-Assisted Molecular Beam Epitaxy Yoo, Myung C., Lee, J. W., Myoung, J. M., Shim, K. H., Kim, K. MRS - Materials Research Society
5 国際会議録 Thermally Stimulated Current Spectroscopy of Carbon-Doped GaN Grown by Molecular Beam Epitaxy Fang, Z-Q., Look, D.C., Armitage, R., Yang, Q., Weber, E.R. Materials Research Society	11 国際会議録 Microstructural Characterization of GaN-GaAs Alloys Grown on (001) GaAs by Molecular Beam Epitaxy Kim, Hyonju, Andersson, T.G., Sodervall, U., Jager, C., Jager, W., Albrecht, M., Bosker, G., Stolwijk, N.A. Materials Research Society
6 国際会議録 High-quality GaN grown by molecular beam epitaxy on Ge(001) Siegle, H., Kim, Y., Sudhir, G. S., Kruger, J., Perlin, P., Ager III, J. W., Kisielowski, C., Weber, E. R. MRS-Materials Research Society	12 国際会議録 Thermal Activation of Beryllium in GaN Grown by RF-Plasma Molecular Beam Epitaxy VanMil, B.L., Lee, Kyoungnae, Wang, Lijun, Giles, N.C., Myers, T.H. Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12