Radiative recombination between two-dimensional electron gas and photoexcited holes in modulation-doped AlxGa1-xN/GaN heterostructures

Radiative recombination between two-dimensional electron gas and photoexcited holes in modulation-doped AlxGa1-xN/GaN heterostructures

著者名:

掲載資料名:

GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

595

発行年:

2000

開始ページ:

W11.53.1

出版情報:

Warrendale, Pa.: MRS-Materials Research Society

ISSN:

02729172

ISBN:

9781558995031 [155899503X]

言語:

英語

請求記号:

M23500/595

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00020895
シリーズID:	PA00000011
会議名:	Symposium on GaN and Related Alloys
回次:	1999
会議開催地:	Boston, Massachusetts, USA
会議開催年:	1999.11.28-1999.12.03

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