Blank Cover Image

Photoluminescence characterization of Mg implanted GaN

著者名:
Ronning, C.
Hofsass, H. C.
Stotzler, A.
Deicher, M.
Carlson, E. P.
Hartlieb, P. J.
Gehrke, T.
Rajagopal, P.
Davis, R. F.
さらに 4 件
掲載資料名:
GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
595
発行年:
2000
開始ページ:
W11.44.1
出版情報:
Warrendale, Pa.: MRS-Materials Research Society
ISSN:
02729172
ISBN:
9781558995031 [155899503X]
言語:
英語
請求記号:
M23500/595
資料種別:
国際会議録

類似資料:

1 国際会議録 Characterization of Be-Implanted GaN Annealed at High Temperatures

Ronning, C., Linthicum, K. J., Carlson, E. P., Hartlieb, P. J., Thomson, D. B., Gehrke, T., Davis, R. F.

MRS - Materials Research Society
7 国際会議録 Identification of As, Ge and Se photoluminescence in GaN using radioactive isotopes

Stotzler, A., Weissenborn, R., Deicher, M

MRS-Materials Research Society
2 国際会議録 Recovery of Structural Defects in GaN After Heavy Ion Implantation

Ronning, C., Dalmer, M., Deicher, M., Restle, M., Bremser, M. D., Davis, R. F., Hofsass, H.

MRS - Materials Research Society
8 国際会議録 Peudeo-EpitaxyTM process for Aluminum Gallium Nitride Thin Films on Silicon Carbide Substrates via Metalorganic Chemical Vapor Deposition

Gehrke, T., Linthicum, K. J., Rajagopal, P., Preble, E. A., Carlson, E. P., Robin, B. M., Davis, R. F.

Trans Tech Publications
3 国際会議録 Lattice Location and Luminescence Behavior of Rare-Earth Elements Implanted in GaN

Dalmer, M., Restle, M., Stotzler, A., Vetter, U., Hofsass, H., Bremser, M. D., Ronning, C., Davis, R. F., The Isolde …

MRS - Materials Research Society
9 国際会議録 Lateral- and Pendeo-epitaxial Growth and Defect Reduction in GaN Thin Films

Davis, R. F., Nam, O. -H., Zheleva, T. S., Gehrke, T., Linthicum, K. J., Rajagopal, P.

Trans Tech Publications
4 国際会議録 Pendeo-epitaxial growth GaN on SiC and silicon substrates via metalorganic chemical vapor deposition

Linthicum, K. J., Gehrke, T., Thomson, D., Ronning, C., Carlson, E. P., Zorman, C. A., Mehregany, M., Davis, R. F.

MRS-Materials Research Society
10 国際会議録 Ranges of Deposition Temperatures Applicable for Metalorganic Vapor Phase Epitaxy of GaN Films Via the Technique of Pendeo-Epitaxy

Thomson, D. B., Gehrke, T., Linthicum, K. J., Rajagopal, P., Davis, R. F.

MRS - Materials Research Society
5 国際会議録 Growth and Characterization of GaN and AlxGa1-xN Thin Films Achieved Via Lateral- and /or Pendeo-Epitaxial Overgrowth on 6H-SiC(0001) Substrates

Davis, R. F., Nam, O-H., Zheleva, T. S., Bremser, M. D., Linthicum, K. J., Gehrke, T., Rajagopal, P., Thomson, D. B., …

MRS - Materials Research Society
11 国際会議録 Advanced PENDEOEPITAXY(TM) of GaN and AlxGa1-xN thin films on SiC(0001) and Si(111) substrates via metalorganic chemical vapor deposition

Gehrke, T., Linthicum, K. J., Rajagopal, P., Preble, E. A., Davis, R. F.

MRS-Materials Research Society
6 国際会議録 *Pendeo-epitaxial growth and characterization of GaN and related materials on 6H-SiC(0001) and Si(111) substrates

Davis, R. F., Gehrke, T., Linthicum, K. J., Zheleva, T. S., Rajagopal, P., Zorman, C. A., Mehregany, M.

MRS-Materials Research Society
12 国際会議録 Process Routes for Low Defect-Density GaN on Various Substrates Employing Pendeo-Epitaxial Growth Techniques

Linthicum, K. J., Gehrke, T., Thomson, D. B., Tracy, K. M., Carlson, E. P., Smith, T. P., Zheleva, T. S., Zorman, C. A., …

MRS - Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12