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High-quality AlN and GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia

著者名:
Nikishin, S. A.
Faleev, N. N.
Antipov, V. G.
Francoeur, S.
Peralta, L. Grave de
Seryogin, G. A.
Holtz, M.
Prokofyeva, T. I.
Chu, S. N. G.
Zubrilov, A. S.
Elyukhin, V. A.
Nikitina, I. P.
Nikolaev, A.
Melnik, Y.
Dmitriev, V.
Temkin, H.
さらに 11 件
掲載資料名:
GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
595
発行年:
2000
開始ページ:
W8.3.1
出版情報:
Warrendale, Pa.: MRS-Materials Research Society
ISSN:
02729172
ISBN:
9781558995031 [155899503X]
言語:
英語
請求記号:
M23500/595
資料種別:
国際会議録

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