The effect of the buffer layer on the structure, mobility and photoluminescence of MBE grown GaN | 東京工業大学附属図書館文献データベース

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The effect of the buffer layer on the structure, mobility and photoluminescence of MBE grown GaN

著者名:

さらに 3 件

掲載資料名:

GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

595

発行年:

2000

開始ページ:

W3.34.1

出版情報:

Warrendale, Pa.: MRS-Materials Research Society

ISSN:

02729172

ISBN:

9781558995031 [155899503X]

言語:

英語

請求記号:

M23500/595

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00020895
シリーズID:	PA00000011
会議名:	Symposium on GaN and Related Alloys
回次:	1999
会議開催地:	Boston, Massachusetts, USA
会議開催年:	1999.11.28-1999.12.03

類似資料:

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2 国際会議録 A TEM Study of the Microstructural Evolution of MBE-Grown GaN Tricker, David M., Brown, Paul D., Martin, Graeme., Lu, J., Westwood, D. I., Hill, P., Haworth, L., MacDonald, J. E., … MRS - Materials Research Society	8 国際会議録 A Study of the Effect of Growth Rate and Annealing on GaN Buffer Layers on Sapphire Ramer, J. C., Zheng, K., Kranenberg, C. F., Banas, M., Hersee, S. D. MRS - Materials Research Society
3 国際会議録 Effect of Buffer Layer and III/V Ratio on the Surface Morphology of GaN Grown by MBE Piquette, E. C., Bridger, P. M., Beach, R. A., McGill, T. C. MRS - Materials Research Society	9 国際会議録 The Effect of Growth Temperature on Atomic Ordering in Ga0.52In0.48P Epilayers Grown on GaAs(001) Substrates by GS-MBE Meenakarn, C., Staton-Bevan, A. E., Dawson, M. D., Duggan, G., Kean, A. H., Najda, S. P. MRS - Materials Research Society
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