The effect of the buffer layer on the structure, mobility and photoluminescence of MBE grown GaN
- 著者名:
Sharma, N. Tricker, D. Keast, V. Hooper, S. Heffernan, J. Barnes, J. Kean, A. Humphreys, C. - 掲載資料名:
- GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 595
- 発行年:
- 2000
- 開始ページ:
- W3.34.1
- 出版情報:
- Warrendale, Pa.: MRS-Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558995031 [155899503X]
- 言語:
- 英語
- 請求記号:
- M23500/595
- 資料種別:
- 国際会議録
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