A study of the effect of V/III flux ratio and substrate temperature on the In incorporation efficiency in InxGa1-x/GaN heterostructures grown by RF plasma-assisted molecular beam epitaxy

A study of the effect of V/III flux ratio and substrate temperature on the In incorporation efficiency in InxGa1-x/GaN heterostructures grown by RF plasma-assisted molecular beam epitaxy

著者名:

掲載資料名:

GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

595

発行年:

2000

開始ページ:

W3.27.1

出版情報:

Warrendale, Pa.: MRS-Materials Research Society

ISSN:

02729172

ISBN:

9781558995031 [155899503X]

言語:

英語

請求記号:

M23500/595

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00020895
シリーズID:	PA00000011
会議名:	Symposium on GaN and Related Alloys
回次:	1999
会議開催地:	Boston, Massachusetts, USA
会議開催年:	1999.11.28-1999.12.03

類似資料:

1 国際会議録 Effect of High Temperature Single and Multiple AlN Intermediate Layers on N-Polar and Ga-Polar GaN Grown by Molecular Beam Epitaxy Fedler, F., Stemmer, J., Hauenstein, R.J., Rotter, T., Sanchez, A.M., Ponce, A., Molina, S.I., Mistele, D., Klausing, … Materials Research Society	7 国際会議録 A Comparison of Magnesium and Beryllium Acceptors in GaN Grown by rf-Plasma Assisted Molecular Beam Epitaxy Ptak, A. J., Myers, T. H., Wang, Lijun, Giles, N. C., Moldovan, M., Cunha, C.R. Da, Hornak, L. A., Tian, C., Hockett, R. … Materials Research Society
2 国際会議録 Characterization of AlxGa1-xN/AlyGa1-yN Distributed Bragg Reflectors Grown by Plasma Assisted Molecular Beam Epitaxy Klausing, H., Fedler, F., Rotter, T., Mistele, D., Semchinova, O., Stemmer, J., Aderhold, J., Graul, J. Materials Research Society	8 国際会議録 GaN Layers Re-Grown on Etched GaN Templates by Plasma Assisted Molecular Beam Epitaxy He, L., Gu, X., Xie, J, Yun, F., Baski, A.A., Morkoc, H. Materials Research Society
3 国際会議録 Microstructure of GaN Films Grown by RF-Plasma Assisted Molecular Beam Epitaxy Komninou, Philomela, Kehagias, Thomas, Kioseoglou, Joseph, Sarigiannidou, Eirini, Karakostas, Theodoros, Nouet, Gerard, … Materials Research Society	9 国際会議録 Thermal Activation of Beryllium in GaN Grown by RF-Plasma Molecular Beam Epitaxy VanMil, B.L., Lee, Kyoungnae, Wang, Lijun, Giles, N.C., Myers, T.H. Materials Research Society
4 国際会議録 Effect of Atomic-Hydrogen Treatment of(001)GaAs Sbustrate at "High Temperatures" on rf Plasma-Assisted Molecular-Beam Epitaxy of Cubic GaN Yokshikawa, A., Nagano, H., Qin, Z. X., Sugure, Y., Jia, A. W., Kobayashi, M., Shimotomai, M., Kato, Y., Takahashi, K. MRS - Materials Research Society	10 国際会議録 Comparative High-resolution X-Ray Diffraction Analysis of GaN/AlGaN Heterostructure on Al₂O₃ and Si (111) Substrate Grown by Plasma … Sanjay Kr. Jana, Saptarsi Ghosh, Syed Mukulika Dinara, Apurba Chakraorty, D. Biswas Materials Research Society
5 国際会議録 RHEED Studies of In Effect on the N-Polarity GaN Surface Kinetics Modulation in Plasma-Assisted Molecular-Beam Epitaxy Shen, X.Q., Ide, T., Shimizu, M., Okumura, H. Trans Tech Publications	11 国際会議録 Effect of Rapid Thermal Annealing: Red and Blue Shift in Photoluminescence of GaNAs Grown By RF Plasma-Assisted Molecular Beam Epitaxy Loke, W.K., Yoon, S.F., Ng, T.K., Wang, S.Z., Fan, W.J. Materials Research Society
6 国際会議録 RHEED Studies of In Effect on the N-Polarity GaN Surface Kinetics Modulation in Plasma-Assisted Molecular-Beam Epitaxy Shen, X.Q., Ide, T., Shimizu, M., Okumura, H. Trans Tech Publications	12 国際会議録 Scanning Tunneling Microscopy Study of Cr-Doped GaN Surface Grown by RF- Plasma Molecular Beam Epitaxy Haider, Muhammad Baseer, Al-Brithen, Hamad, Constantin, Costel, Smith, Arthur R., Caruntu, Gabriel, O;Connor, Charles J. Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12