GaN and AIN layers grown by nano epitaxial lateral overgrowth technique on porous substrates | 東京工業大学附属図書館文献データベース

Blank Cover Image

GaN and AIN layers grown by nano epitaxial lateral overgrowth technique on porous substrates

著者名:

Kryzhanovski, A.

さらに 8 件

掲載資料名:

GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

595

発行年:

2000

開始ページ:

W2.7.1

出版情報:

Warrendale, Pa.: MRS-Materials Research Society

ISSN:

02729172

ISBN:

9781558995031 [155899503X]

言語:

英語

請求記号:

M23500/595

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00020895
シリーズID:	PA00000011
会議名:	Symposium on GaN and Related Alloys
回次:	1999
会議開催地:	Boston, Massachusetts, USA
会議開催年:	1999.11.28-1999.12.03

類似資料:

1 国際会議録 Growth of SiC and GaN on Porous Buffer Layers Mynbaeva, M., Savkina, N. S., Tregubova, A. S., Scheglov, M. P., Lebedev, A. A., Zubrilov, A., Titkov, A., Kryganovski, … Trans Tech Publications	7 国際会議録 4H-SiC CVD Epitaxial Layers with Improved Structural Quality Grown on SiC Wafers with Reduced Micropipe Density Kalinina, E. V., Zubrilov, A., Solov'ev, V., Kuznetsov, N., Hallen, A., Konstantinov, A., Karlsson, S., Rendakova, S., … Trans Tech Publications
2 国際会議録 Porous SiC substrate materials for high-quality epitaxial and bulk growth Mynbaeva, M., Savkina, N., Zubrilov, A., Seredova, N., Scheglov, M., Titkov, A., Tregubova, A., Lebedev, A., … MRS-Materials Research Society	8 国際会議録 4H-SiC Layers Grown by Liquid Phase Epitaxy on 4H-SiC Off-Axis Substrates Kuznetsov, N., Morozov, A., Baumann, D., Ivantsov, V., Sukhoveev, V., Nikitina, I., Zubrilov, A., Rendakova, S., … Trans Tech Publications
3 国際会議録 Properties of GaN Homoepitaxial Layers Grown on GaN Epitaxial Wafers Dmitriev, V., Nikolaev, A., Cherenkov, A., Tsvetkov, D., Stepanov, S., Kuznetsov, N., Nikitina, I., Kovarsky, A., … MRS - Materials Research Society	9 国際会議録 Structural Characterization of SiC Epitaxial Layers Grown on Porous SiC Substrates Saddow, S.E., Melnychuk, G., Mynbaeva, M., Nikitina, I., Vetter, W.M., Jin, L., Dudley, M., Shamsuzzoha, M., Dmitriev, … Materials Research Society
4 国際会議録 AIN/GaN and AlGaN/GaN Heterostructures Grown by HVPE on SiC Substrates Melnik, Yu. V., Nikolaev, A. E., Stepanov, S. I., Zubrilov, A. S., Nikitina, I. P., Vassilevski, K. V., Tsvetkov, D. V., … MRS - Materials Research Society	10 国際会議録 Epitaxial Lateral Overgrowth of GaN on SiC and Sapphire Substrates Yu, Z., Johnson, M. A. L., Brown, J. D., El-Masry, N. A., Muth, J. F., Cook, J. W., Jr., Schetzina, J. F., Haberern, K. … MRS - Materials Research Society
5 国際会議録 InN Nano Rods and Epitaxial Layers Grown by HVPE on Sapphire Substrates and GaN, AlGaN, AIN Templates Syrkin, Alexander, Usikov, Alexander, Soukhoveev, Vitali, Kovalenkov, Oleg, Ivantsov, Vladimir, Dmitriev, Vladimir, … Materials Research Society	11 国際会議録 On Current Limitations in Porous SiC Applications Mynbaeva, M., Lavrent'ev, A., Kotousova, I., Volkova, A., Mynbaev, K., Lebedev, A. Trans Tech Publications
6 国際会議録 P-Type GaN Epitaxial Layers and AlGaN/GaN Heterostructures with High Hole Concentration and Mobility Grown by HVPE Usikov, A., Kovalenkov, O., Ivantsov, V., Sukhoveev, V., Dmitriev, V., Shmidt, N., Poloskin, D., Petrov, V., Ratnikov, … Materials Research Society	12 国際会議録 Crystal Structure and Optical Properties of Bulk GaN Crystals Grown from a Melt at Reduced Pressure Sukhoveyev,V., Ivantsov,V., Zubrilov,A., Nikolaev,V., Nikitina,I., Bougrov,V., Tsvetkov,D., Dmitriev,V. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12