Monte Carlo simulations of electron transport in bulk GaN and AlGaN-GaN heterostructures

Monte Carlo simulations of electron transport in bulk GaN and AlGaN-GaN heterostructures

著者名:

Li,T. ( Old Dominion Univ )
Joshi,R.P.
Fazi,C.

掲載資料名:

Ultrafast phenomena in semiconductors IV : 27-28 January 2000, San Jose, California

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

3940

発行年:

2000

開始ページ:

112

終了ページ:

126

出版情報:

Bellingham, Wash.: SPIE - The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819435576 [0819435570]

言語:

英語

請求記号:

P63600/3940

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00020891
シリーズID:	PA00000029
会議名:	Photonics West - Optoelectronic Materials and Devices : Ultrafast Phenomena in Semiconductors
回次:	2000 : 4th
会議開催地:	San Jose, CA, USA
会議開催年:	2000.01.27-2000.01.28

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