Improved performance and reliability in aggressively-scaled NMOS and PMOS FETs: i)Monolyaer interface nitridation, and ii)Replacement of stacked oxide/nitride dielectrics with optimized oxide/oxynitride stacks

Improved performance and reliability in aggressively-scaled NMOS and PMOS FETs: i)Monolyaer interface nitridation, and ii)Replacement of stacked oxide/nitride dielectrics with optimized oxide/oxynitride stacks

著者名:

掲載資料名:

Structure and electronic properties of ultrathin dielectric films on silicon and related structures : symposium held November 29-December 1, 1999, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

592

発行年:

2000

開始ページ:

177

出版情報:

Warrendale, PA: MRS-Materials Research Society

ISSN:

02729172

ISBN:

9781558995000 [1558995005]

言語:

英語

請求記号:

M23500/592

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00020837
シリーズID:	PA00000011
会議名:	Structure and Electronic Properties of Ultrathin Dielectric Films on Silicon and Related Structures : Symposium
回次:	1999
会議開催地:	Boston, MA, USA
会議開催年:	1999.11.29-1999.12.01

類似資料:

1 国際会議録 Imdependent tunneling reductions relative to homogeneous oxide dielectrics from i)Nitrided interfaces, and ii) Physically-thicker stacked oxide/nitride and … Lucovsky, Gerry, Wu, Yider, Lee, Yi-Mu, Yang, Hanyang, Niimi, Hiro MRS-Materials Research Society	7 国際会議録 Electrical Performance of Stacked High-ti Gate Dielectrics: Remote Plasma CVD Ta2O5 and (Ta2O5)x(SiO2)1-x Alloys with Ultrathin Plasma Processed Si02 Interface … Niimi, H., Johnson, R.S., Lucovsky, C., Massoud, H.Z. Electrochemical Society
2 国際会議録 The Effects of Interfacial Suboxide Transition Regions On Direct Tunneling in Oxide and Stacked Oxide-Nitride Gate Dielectrics Yang, H., Niimi, H., Wu, Y., Lucovsky, G. MRS - Materials Research Society	8 国際会議録 Ultrathin Silicon Oxide and Nitride - Silicon Interface States Brillson, L. J., Young, A. P., Schafer, J., Niimi, H., Lucovsky, G. MRS - Materials Research Society
3 国際会議録 Aggressively Scaled P-Channel MOSFETs With Stacked Nitride-Oxide-Nitride, N/O/N, Gate Dielectrics Wu, Y., Lucovsky, G. MRS - Materials Research Society	9 国際会議録 Controlled Incorporation of Nitrogen at the Top Surface of Silicon Oxide Gate Dielectrics Niimi, H., Koh, K., Lucovsky, G. MRS - Materials Research Society
4 国際会議録 SILICON OXYNITRIDE AND OXIDE-NITRIDE-OXIDE GATE DIELECTRICS BY CONBINED PLASMA-RAPID THERMAL PROCESSING Ma, Y., Hattangady, S. V., Yasuda, T., Niimi, H., Gandhi, S., Lucovsky, G. MRS - Materials Research Society	10 国際会議録 IMPROVED ELECTRICAL PERFORMANCE OF a-Si:H THIN FILM TRANSISTORS, TFTs WITH n+ μc-Si CONTACT, AND SILICON OXIDE AND NITRIDE DUAL-LAYER DIELECTRICS He, S.S., Stephens, D.J., Lucovsky, G. Materials Research Society
5 国際会議録 Integrated Processing of Silicon Oxynitride Alloy Dielectrics by Plasma-Assisted Oxidation, Chemical Vapor Deposition, and On-Line Rapid Thermal Annealing Hattangady, S. V., Niimi, H., Gandhi, S., Lucovsky, G. MRS - Materials Research Society	11 国際会議録 Nitrided Silicon Oxide Gate Dielectrics for Submicron Device Technology Lucovsky, G. MRS - Materials Research Society
6 国際会議録 Differences between Interfacial Bonding Chemistry at SiC-SiO2 Interfaces Prepared by Low-Temperature Remote Plasma-Assisted Oxidation and High Temperature … Lucovsky,G., Niimi,H. Trans Tech Publications	12 国際会議録 Incorporation of Nitrogen Atoms at Si/SiO2 Interfaces of Field Effect Transistors (FETs) to Improve Device Reliability Lucovsky, G., Lee, D. R., Jing, Z., Whitten, J. L., Parker, C., Hauser, J. R. MRS - Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12