Blank Cover Image

MICROSTRUCTURE OF Si FILMS DEPOSITED ON Si(100) SURFACES BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR DEPOSITION, RPECVD: DEPENDENCE ON PROCESS PRESSURE AND SUBSTRATE TEMPERATURE

著者名:
掲載資料名:
Phase transformations in thin films : thermodynamics and kinetics : symposium held April 13-15, 1993, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
311
発行年:
1993
開始ページ:
379
出版情報:
Pittsburgh, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558992078 [1558992073]
言語:
英語
請求記号:
M23500/311
資料種別:
国際会議録

類似資料:

1 国際会議録 QUASI-STOICHIOMETRIC SILICON NITRIDE THIN FILMS DEPOSITED BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR DEPOSITION

Lucovsky, G., Ma, Y., He, S.S., Yasuda, T., Stephens, D.J., Habermehl, S.

Materials Research Society
7 国際会議録 SURFACE CLEANING PRIOR TO FORMATION OF Si/SiO2 INTERFACES BY REMOTE PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION (RPECVD)

Lamb, H.H., Kalem, S., Bedge, S., Yasuda, T., Ma, Y., Lucovsky, G.

Materials Research Society
2 国際会議録 Homoepitaxial Growth of Si by Remote Plasma Chemical Vapor Deposition

Habermehl, S., Lucovsky, G.

American Institute of Chemical Engineers
8 国際会議録 Deposition of Device-Quality Dielectric Thin Films by Remote Plasma-Enhanced Chemical-Vapor Deposition (RPECVD) and Rapid Thermal Annealing (RTA)

Lucovsky, G., Lu, Z., Lee, D.R.

American Institute of Chemical Engineers
3 国際会議録 *THE ELECTRICAL PROPERTIES OF SILICON OXIDE DEPOSITED BY REMOTE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (RPECVD)

Kim, Sang S., Tsu, D. V., Lucovsky, G.

Materials Research Society
9 国際会議録 CHARACTERIZATION OF SILICON-NITRIDE FILM GROWTH BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR DEPOSITION (PRECVD)

Lu, Zhong, Ma, Yi, Habermehl, Scott, Lucovsky, Gerry

MRS - Materials Research Society
4 国際会議録 THE ELECTRICAL PROPERTIES OF SILICON OXIDE DEPOSITED BY REMOTE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (RPECVD)

Kim, Sang S., Tsu, D. V., Lucovsky, G.

Materials Research Society
10 国際会議録 A NEW TWO-STEP PLASMA-ASSISTED SURFACE CLEANING-OXIDATION AND FILM-DEPOSITION PROCESS SEQUENCE FOR THE FORMATION OF Si(100)/SiO2 INTERFACES WITH LOW DENSITIES …

Ma, Y., Yasuda, T., Habermehl, S., He, S.S., Stephens, D.J., Lucovsky, G.

Materials Research Society
5 国際会議録 DEPOSITION AND CHARACTERIZATION OF NEAR ‘INTRINSIC” μc-Si FILMS DEPOSITED BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR DEPOSITION -RPECVD

Williams, M.J., Wang, C., Lucovsky, G.

Materials Research Society
11 国際会議録 DEPOSITION OF GaN BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR DEPOSITION (Remote PECVD)

Choi, S.W., Bachmann, K.J., Lucovsky, G.

Materials Research Society
6 国際会議録 Bonding of Hydrogen and Deuterium in Silicon Nitride Films Prepared by Remote Plasma Enhanced Chemical Vapor Deposition

Stevens, G., Santos-Filho, P., Habermehl, S., Lucovsky, G.

MRS - Materials Research Society
12 国際会議録 BONDED HYDROGEN IN SILICON OXIDE THIN FILMS DEPOSITED BY REMOT PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION

Tsu, D. V., Lucovsky, G.

Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12