Defects and diffusion in Si+ implanted GaAs

Defects and diffusion in Si+ implanted GaAs

著者名:

Jones, K. S.

掲載資料名:

III-V electronic and photonic device fabrication and performance : symposium held April 12-15, 1993, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

300

発行年:

1993

開始ページ:

323

出版情報:

Pittsburgh, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558991965 [1558991964]

言語:

英語

請求記号:

M23500/300

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00020790
シリーズID:	PA00000011
会議名:	Symposium on electronic and photonic device fabrication and performance
回次:	1993
会議開催地:	San Francisco, CA, USA
会議開催年:	1993.04.12-1993.04.15

類似資料:

1 国際会議録 SPUTTERING INDUCED CHANGES IN DEFECT MORPHOLOGY AND DOPANT DIFFUSION FOR Si IMPLANTED GaAs: INFLUENCE OF ION ENERGY AND IMPLANT TEMPERATURE Robinson, H. G., Lee, C. C., Haynes, T. E., Allen, E. L., Deal, M. D., Jones, K. S. MRS - Materials Research Society	7 国際会議録 Modeling the Diffusion Behavior of Implanted Beryllium in Gallium Arsenide Using Suprem - IV C.J. Hlu, M. D. Deal, H. G. Robinson, J. D. Plummer Electrochemical Society
2 国際会議録 *ION IMPLANTATION RELATED DEFECTS IN GaAs Jones, K. S., Bollong, M., Haynes, T. E., Deal, M. D., Allen, E. L., Robinson, H. G. Materials Research Society	8 国際会議録 Modeling dopant diffusion in Gallium arsenide Deal, M. D., Hu, C. J., Lee, C. C., Robinson, H. G. MRS - Materials Research Society
3 国際会議録 DIFFUSION OF ION IMPLANTED Mg AND Be IN GaAs Robinson, H.G., Deal, M.D., Stevenson, D.A. Materials Research Society	9 国際会議録 Nitrogen Implantation and Diffusion in Silicon Adam, L. S., Law, M. E., Dokumaci, O., Haddara, Y., Murthy, C., Park, H., Hegde, S., Chidambarrao, D., Mollis, S., … MRS - Materials Research Society
4 国際会議録 CORRELATION OF DISLOCATION LOOP FORMATION AND TIME DEPENDENT DIFFUSION OF IMPLANTED P-TYPE DOPANTS IN GALLIUM ARSENIDE Robinson, H. G., Deal, M. D., Steveson, D. A., Jones, K. S. Materials Research Society	10 国際会議録 DIFFUSION OF ION-IMPLANTED TIN IN GALLIUM ARSENIDE Allen, E.L., Deal, M.D., Plummer, J.D. Materials Research Society
5 国際会議録 Time dependent diffusion of P-TYPE dopants in Gallium arsenide Robinson, H. G., Jones, K. S., Deal, M. D., Hu, C. J. MRS - Materials Research Society	11 国際会議録 IMPLANTED DOPANT-DEFECT INTERACTIONS IN GaAs Pearton, S. J., Williams, J. S., Short, K. T., Johnson, S. T., Gibson, J. M., Jacobson, D. C., Poate, J. M., Boerma, D. … Materials Research Society
6 国際会議録 A New Model for the Anomalous Diffusion of Grown-In Magnesium in GaAs Haddara, Y.M., Deal, M.D., Robinson, H.G., Bravman, J.C. Electrochemical Society	12 国際会議録 Effect of Ion Enery and Dose on the Diffusion of Silicon Implanted into Gallium Arsenide C. C. Lee, M. D. Deal, J. C. Bravman Electrochemical Society

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