Lattice damage in ion-implanted compound semiconductors and its effect on electrical activation

Lattice damage in ion-implanted compound semiconductors and its effect on electrical activation

著者名:

掲載資料名:

III-V electronic and photonic device fabrication and performance : symposium held April 12-15, 1993, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

300

発行年:

1993

開始ページ:

311

出版情報:

Pittsburgh, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558991965 [1558991964]

言語:

英語

請求記号:

M23500/300

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00020790
シリーズID:	PA00000011
会議名:	Symposium on electronic and photonic device fabrication and performance
回次:	1993
会議開催地:	San Francisco, CA, USA
会議開催年:	1993.04.12-1993.04.15

類似資料:

1 国際会議録 STRESS RELEASE IN ION IMPLANTED LATTICE MISMATCHED SEMICONDUCTOR HETEROSTRUCTURES Arnold, G.W., Picraux, S.T., Myers, D.R., Doyle, B.L., Peercy, P.S., Biefeld, R.M., Dawson, L.R. Materials Research Society	7 国際会議録 THE EFFECT OF IMPLANT SPECIES ON THE STABILITY OF ION IMPLANTATION DAMAGE Jones, K. S., Prussin, S., Venables, D. Materials Research Society
2 国際会議録 LATTICE DISORDERING, PHASE TRANSITION, AND SUBSTRATE TEMPERATURE EFFECTS IN MeV-ION-IMPLANTED III-V COMPOUND SEMICONDUCTORS Xiong, Fulin, Tsai, C.J., Vreeland, Jr., T., Tombrello, T.A. Materials Research Society	8 国際会議録 Effects of Vacancy-Type Defects on Electrical Activation of P+ Implanted Into Silicon Watanabe, M., Kitano, T., Asada, S., Uedono, A., Moriya, T., Kawano, T., Tanigawa, S., Suzuki, R., Ohdaira, T., Mikado, … MRS - Materials Research Society
3 国際会議録 Electrical Activation of B Implant in 6H-SiC Valcheva,E., Paskova,T., Ivanov,I.S., Yakimova,R., Wahab,Q., Savage,S., Nordell,N., Hamis,C.I. Trans Tech Publications	9 国際会議録 Effects of Vacancy-Type Defects on Electrical Activation of P+ Implanted Into Silicon Watanabe, M., Kitano, T., Asada, S., Uedono, A., Moriya, T., Kawano, T., Tanigawa, S., Suzuki, R., Ohdaira, T., Mikado, … MRS - Materials Research Society
4 国際会議録 The Effect of the Lattice Defects Doped by the Ion Implantation into the Carbon Electrode of Li Secondary Battery A. Mabuchi, H. Fujimoto, N. Yamanishi, T. Kasuh, R. Fujii, K. Tatsumi, S. Higuchi, T. Maede Electrochemical Society	10 国際会議録 The Effect Of Impurities On Diffusion And Activation Of Ion Implanted Boron In Silicon Robertson, L.S., Brindos, R., Jones, K. S., Law, Mark E., Downey, D. F., Falk, S., Liu, J. Materials Research Society
5 国際会議録 Effect of Dopant Concentrations and Annealing Conditions on the Electrically Active Profiles and Lattice Damage in Al Implanted 4H-SiC M.H. Weng, F. Roccaforte, F. Giannazzo, S. Di Franco, C. Bongiorno Trans Tech Publications	11 国際会議録 DAMAGE FORMATION IN SEMICONDUCTORS DURING MeV ION IMPLANTATION Sjoreen, T.P., Holland, O.W., El-Ghor, M.K., White, C.W. Materials Research Society
6 国際会議録 Microstructure and Size Distribution of Compound Semiconductor Nanocrystals Synthesized by Ion Implantation Meldrum, A., Withrow, S. P., Zuhr, R. A., White, C. W., Boatner, L. A., Budai, J. D., Anderson, I. M., Henderson, D. O., … MRS - Materials Research Society	12 国際会議録 *ION IMPLANTATION RELATED DEFECTS IN GaAs Jones, K. S., Bollong, M., Haynes, T. E., Deal, M. D., Allen, E. L., Robinson, H. G. Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12