Low temperature SiNx as a sacrificial layer in novel device fabrication

Low temperature SiNx as a sacrificial layer in novel device fabrication

著者名:

Lothian, J. R.

掲載資料名:

III-V electronic and photonic device fabrication and performance : symposium held April 12-15, 1993, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

300

発行年:

1993

開始ページ:

161

出版情報:

Pittsburgh, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558991965 [1558991964]

言語:

英語

請求記号:

M23500/300

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00020790
シリーズID:	PA00000011
会議名:	Symposium on electronic and photonic device fabrication and performance
回次:	1993
会議開催地:	San Francisco, CA, USA
会議開催年:	1993.04.12-1993.04.15

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3 国際会議録 REDUCTION OF SIDEWALL ROUGHNESS DURING DRY ETCHING OF SiO2 Ren, F., Pearton, S.J., Lothian, J.R., Abernathy, C.R., Hobson, W.S. Materials Research Society	9 国際会議録 Formation of long wavelength InP laser MESAS Ren, F., Pearton, S. J., Tseng, B., Lothian, J. R., Constantine, C. MRS - Materials Research Society
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