Practical Aspects of Forming Ultra-Shallow Junctions by Sub-keV Boron Implants

Practical Aspects of Forming Ultra-Shallow Junctions by Sub-keV Boron Implants

著者名:

Foad, M. A.

掲載資料名:

Si front-end processing - physics and technology of dopant-defect interactions : symposium held April 6-9, 1999, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

568

発行年:

1999

開始ページ:

55

出版情報:

Warrendale, PA: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558994751 [1558994750]

言語:

英語

請求記号:

M23500/568

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00020789
シリーズID:	PA00000011
会議名:	Symposium on si front-end processing-physics and technology of dopant-defect interactions
回次:	1999
会議開催地:	San Francisco, CA, USA
会議開催年:	1999.04.06-1999.04.09

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