Ultra-Low Energy Boron Implants in Crystalline Silicon: Atomic Transport Properties and Electrical Activation
- 著者名:
Napolitani, E. Carnera, A. Privitera, V. Magna, A. La Schroer, E. Priolo, F. Mannino, G. Moffatt, S. - 掲載資料名:
- Si front-end processing - physics and technology of dopant-defect interactions : symposium held April 6-9, 1999, San Francisco, California, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 568
- 発行年:
- 1999
- 開始ページ:
- 43
- 出版情報:
- Warrendale, PA: MRS - Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558994751 [1558994750]
- 言語:
- 英語
- 請求記号:
- M23500/568
- 資料種別:
- 国際会議録
類似資料:
1
国際会議録
The Source Of Transient Enhanced Diffusion In Sub-KeV Implanted Boron In Crystalline Silicon
Materials Research Society |
Materials Research Society |
MRS - Materials Research Society | |
3
国際会議録
Ultra-Shallow Junction Formation by Excimer Laser Annealing of Ultra-Low Energy B Implanted in Si
Materials Research Society |
Materials Research Society |
Materials Research Society |
Materials Research Society |
Materials Research Society |
MRS - Materials Research Society |
Materials Research Society |
MRS - Materials Research Society |