Blank Cover Image

Shallow Boron Implant Activation

著者名:
掲載資料名:
Si front-end processing - physics and technology of dopant-defect interactions : symposium held April 6-9, 1999, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
568
発行年:
1999
開始ページ:
31
出版情報:
Warrendale, PA: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558994751 [1558994750]
言語:
英語
請求記号:
M23500/568
資料種別:
国際会議録

類似資料:

1 国際会議録 Ultra-Shallow Junctions by Ion Implantation and Rapid Thermal Annealing: Spike-Anneals, Ramp Rate Effects

Agarwal, A., Gossmann, H-J., Fiory, A. T.

MRS - Materials Research Society
7 国際会議録 Influence of Flouring and BF2 Implants on the Transient Enhanced Diffusion of Boron

Vuong, H-H., Gossmann, H.-J., Rafferty, C.S., Luftman, H.S., Unterwald, F.C., Jacobson, D.C., Ahrens, R.E, Boone, T., …

Electrochemical Society
2 国際会議録 Implant Dose and Spike Anneal Temperature Relationships

Bourdelle, K.K., Fiory, A.T., Gossmann, H.-J. L., McCoy, S.P.

Materials Research Society
8 国際会議録 Temperature- and Time-Dependence of Boron-Enhanced Diffusion from Evaporated- and Ultra-Low Energy Ion-Implanted Layers

Agarwal, A., Gossmann, H-J., Eaglesham, D. J.

MRS - Materials Research Society
3 国際会議録 Ultra-Shallow Junction Formation Using Ion Implantation and Rapid Thermal Annealing: Physical and Practical Limits

Agarwal, A., Gossmann, H.-J.L., Fiory, A.T., Venezia, V.C., Jacobson, D.C.

Electrochemical Society
9 国際会議録 HIGH ENERGY IMPLANTATION OF BORON: REDUCTION OF THREADING DISLOCATION DENSITY IN THE BAD DOSE REGION

Bourdelle, K.K., Eaglesham, D.J., Jacobson, D.C., Agarwal, A.

Electrochemical Society
4 国際会議録 Activation Of Implanted Poly Gates By Short Cycle Time Annealing

Fiory, Anthony T., Bourdelle, Konstantin K.

Materials Research Society
10 国際会議録 Atomistic Model of Transient-Enhanced Diffusion and Clustering of Boron in Silicon

Pelaz, L., Gilmer, G. H., Jaraiz, M., Gossmann, H-J., Rafferty, C. S., Eaglesham, D. J., Poate, J. M.

MRS - Materials Research Society
5 国際会議録 Electrical Measurements of Annealed Boron Implants for Shallow Junctions

Fiory, A.T., Baurdelle, K.K., Lefrancois, M.E., Camm, D.M, Agarwal, A.

Electrochemical Society
11 国際会議録 Antimony Clustering Due To High-Dose Implantation

Kalyanaraman, Ramki, Haynes, Tony E., Venezia, Vincent C., Jacobson, Dale C., Gossmann, Hans J., Rafferty, Conor S.

Materials Research Society
6 国際会議録 BORON-ENHANCED-DIFFUSION OF BORON FROM ULTRA- LOW-ENERGY BORON IMPLANTATION

Agarwal, A., Eaglesham, D.J., Gossmann, H.-J., Pelaz, L., Herner, S.B., Jacobson, D.C., Haynes, T.E., Erokhin, Yu E.

Electrochemical Society
12 国際会議録 Enhanced Diffusion of Dopants in Vacancy Supersaturation Produced by MeV Implantation

Venezia, V. C., Haynes, T. E., Agarwal, A., Gossmann, H-J., Eaglesham, D. J.

MRS - Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12