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Temperature- and Time-Dependence of Boron-Enhanced Diffusion from Evaporated- and Ultra-Low Energy Ion-Implanted Layers

著者名:
掲載資料名:
Si front-end processing - physics and technology of dopant-defect interactions : symposium held April 6-9, 1999, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
568
発行年:
1999
開始ページ:
3
出版情報:
Warrendale, PA: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558994751 [1558994750]
言語:
英語
請求記号:
M23500/568
資料種別:
国際会議録

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