Electrical and Optical Properties of InGaN/AlGaN Double Heterostructure Blue Light-Emitting Diodes
- 著者名:
Yang, K. Shi, H. T. Shen, B. Zhang, R. Chen, Z. Z. Chen, P. Zheng, Y. D. - 掲載資料名:
- Gallium nitride and related materials II : symposium held April 1-4, 1997, San Francisco, California, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 468
- 発行年:
- 1997
- 開始ページ:
- 469
- 出版情報:
- Pittsburgh, Pa.: MRS - Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558993723 [155899372X]
- 言語:
- 英語
- 請求記号:
- M23500/468
- 資料種別:
- 国際会議録
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9
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Homoepitaxial growth of InGaN/GaN double-heterostructure light-emitting diode by low-pressure MOCVD
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