Blank Cover Image

SPUTTERING INDUCED CHANGES IN DEFECT MORPHOLOGY AND DOPANT DIFFUSION FOR Si IMPLANTED GaAs: INFLUENCE OF ION ENERGY AND IMPLANT TEMPERATURE

著者名:
Robinson, H. G.
Lee, C. C.
Haynes, T. E.
Allen, E. L.
Deal, M. D.
Jones, K. S.
さらに 1 件
掲載資料名:
Beam-solid interactions for materials synthesis and characterization : symposium held November 28-December 2, 1994, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
354
発行年:
1995
開始ページ:
337
出版情報:
Pittsburgh, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558992559 [1558992553]
言語:
英語
請求記号:
M23500/354
資料種別:
国際会議録

類似資料:

1 国際会議録 Defects and diffusion in Si+ implanted GaAs

Jones, K. S., Robinson, H. G., Haynes, T. E., Deal, M. D., Lee, C. C., Allen, E. L.

MRS - Materials Research Society
7 国際会議録 INFLUENCE OF THE TEMPERATURE OF IMPLANTATION ON THE MORPHOLOGY OF DEFECTS IN MeV IMPLANTED GaAs

Braunstein,. G., Chen, Samuel, Lee, -Tong S, Rajeswaran, G.

Materials Research Society
2 国際会議録 *ION IMPLANTATION RELATED DEFECTS IN GaAs

Jones, K. S., Bollong, M., Haynes, T. E., Deal, M. D., Allen, E. L., Robinson, H. G.

Materials Research Society
8 国際会議録 IMPLANTED DOPANT-DEFECT INTERACTIONS IN GaAs

Pearton, S. J., Williams, J. S., Short, K. T., Johnson, S. T., Gibson, J. M., Jacobson, D. C., Poate, J. M., Boerma, D. …

Materials Research Society
3 国際会議録 DIFFUSION OF ION IMPLANTED Mg AND Be IN GaAs

Robinson, H.G., Deal, M.D., Stevenson, D.A.

Materials Research Society
9 国際会議録 DIFFUSION OF ION-IMPLANTED TIN IN GALLIUM ARSENIDE

Allen, E.L., Deal, M.D., Plummer, J.D.

Materials Research Society
4 国際会議録 CORRELATION OF DISLOCATION LOOP FORMATION AND TIME DEPENDENT DIFFUSION OF IMPLANTED P-TYPE DOPANTS IN GALLIUM ARSENIDE

Robinson, H. G., Deal, M. D., Steveson, D. A., Jones, K. S.

Materials Research Society
10 国際会議録 A New Model for the Anomalous Diffusion of Grown-In Magnesium in GaAs

Haddara, Y.M., Deal, M.D., Robinson, H.G., Bravman, J.C.

Electrochemical Society
5 国際会議録 Time dependent diffusion of P-TYPE dopants in Gallium arsenide

Robinson, H. G., Jones, K. S., Deal, M. D., Hu, C. J.

MRS - Materials Research Society
11 国際会議録 THE EFFECT OF MASS RESOLUTION DURING ION IMPLANTATION ON DEFECT FORMATION AND ELECTRICAL PROPERTIES IN GALLIUM ARSENIDE

Jasper, Craig, Klingbeil, Scott, Jones, K. S., Robinson, H. G.

MRS - Materials Research Society
6 国際会議録 Modeling dopant diffusion in Gallium arsenide

Deal, M. D., Hu, C. J., Lee, C. C., Robinson, H. G.

MRS - Materials Research Society
12 国際会議録 Enhanced Diffusion of Dopants in Vacancy Supersaturation Produced by MeV Implantation

Venezia, V. C., Haynes, T. E., Agarwal, A., Gossmann, H-J., Eaglesham, D. J.

MRS - Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12