Nanometre Scale Reactive Ion Etching of GaN Epilayers

Nanometre Scale Reactive Ion Etching of GaN Epilayers

著者名:

Coquillat,D.

掲載資料名:

Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997

シリーズ名:

Materials science forum

シリーズ巻号:

264-268

発行年:

1998

巻:

Part2

開始ページ:

1403

終了ページ:

1406

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878497928 [0878497927]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00020694
シリーズID:	PA00000012
会議名:	ICSCIII-N : International Conference on Silicon Carbide, III-Nitrides Related Materials
回次:	1997 : 7th
会議開催地:	Stockholm, Sweden
会議開催年:	1997.09.00

類似資料:

1 国際会議録 DEEP LEVELS INDUCED BY SiCl4 REACTIVE ION ETCHING IN GaAs Johnson, N. P., Foad, M. A., Murad, S., Holland, M. C., Wilkinson, C. D. W. MRS - Materials Research Society	7 国際会議録 Investigation of GaN Epilayers Growth Mechanisms Using In Situ Reflectance in MOCVD Moret, Matthieu, Briot, Olivier, Ruffenach-Clur, Sandra, Aulombard, Roger-Louis Materials Research Society
2 国際会議録 Effects of Strain Fields on Excitons and Phonons in Wurtzite GaN Epilayers Gil, B., Briot, O., Aulombard, R. L., Demangeot, J. F., Frandon, J., Renucci, M. MRS - Materials Research Society	8 国際会議録 Reactive Ion Etching of AlN, AlGaN, and GaN Using BCl3 Hughes, W. C., Rowland, W. H., Jr., Johnson, M. A. L., Cook, J. W., Jr., Schetzina, J. F. MRS - Materials Research Society
3 国際会議録 Microstructures for Monitoring Wafer Uniformity of Reactive Ion Etching Leung, R., Howard, D.W., Collins, S.D., Smith, R.L. Electrochemical Society	9 国際会議録 REACTIVE ION ETCHING OF GaN THIN FILMS Manfra, Michael, Berkowitz, Stuart, Molnar, Richard, Clark, Anna, Moustakas, T. D., Skocpol, W. J. MRS - Materials Research Society
4 国際会議録 Photonic crystals in epitaxial semiconductors Rue,R.M.De La SPIE - The International Society for Optical Engineering	10 国際会議録 Optimization of the GaN Epilayer Quality Using In-Situ Reflectance Measurements Ruffenach-Clur, Sandra, Moret, Matthieu, Briot, Olivier, Moreaud, Nathanaeel, Calas, Joseph, Aulombard, Roger L. Materials Research Society
5 国際会議録 Optical Anisotropy of the Optical Response for Strained GaN Epilayers Grown Along the <10-10> Direction Andenet, A., Gil, B., Vaillant, Y-M. Le, Clur, S., Briot, O., Aulombard, R. L. MRS - Materials Research Society	11 国際会議録 MOVPE GROWTH AND OPTICAL CHARACTERIZATION OF HIGH-QUALITY ZnSe-ZnS SUPERLATTICES USING A NOVEL ZINC ADDUCT PRECURSOR Briot, O., Blasio, M. Di, Cloitre, T., Briot, N., Bigenwald, P., Gil, B., Averous, M., Aulombard, R. L., Smith, L. M., … MRS - Materials Research Society
6 国際会議録 High Reflectivity AlGaN/GaN Bragg Mirrors Grown by MOCVD for Microcavities Applications Moret, M., Ruffenach, S., Briot, O., Gil, B., Aulombard, R. L. Materials Research Society	12 国際会議録 Er Doped GaN by Gas Source Molecular Beam Epitaxy on GaN Templates Rousseau, N., Briot, O., Ribes, V., Aulombard, R. L., network, RENIBEL Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12