Transmission Electron Microscopy Study of GaN on SiC on SIMOX Grown by Metalorganic Chemical Vapor Deposition
- 著者名:
Zhou,W.L. Pirouz,P. Namavar,F. Colter,P.C. Yoganathan,M. Leksono,M.W. Pankove,J.I. - 掲載資料名:
- Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997
- シリーズ名:
- Materials science forum
- シリーズ巻号:
- 264-268
- 発行年:
- 1998
- 巻:
- Part2
- 開始ページ:
- 1239
- 終了ページ:
- 1242
- 出版情報:
- Zuerich, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878497928 [0878497927]
- 言語:
- 英語
- 請求記号:
- M23650
- 資料種別:
- 国際会議録
類似資料:
MRS - Materials Research Society |
Materials Research Society |
Trans Tech Publications |
Materials Research Society |
Trans Tech Publications |
MRS - Materials Research Society |
Materials Research Society |
Trans Tech Publications |
MRS - Materials Research Society |
11
国際会議録
Nanoheteroepitaxy of GaN on columnar SiC substrates by metalorganic chemical vapor deposition
SPIE - The International Society of Optical Engineering |
MRS - Materials Research Society |
SPIE - The International Society for Optical Engineering |