Blank Cover Image

Influence of Activated Nitrogen on Plasma Assisted MBE Growth of GaN

著者名:
Birkle,U.
Thomas,C.
Fehrer,M.
Einfldt,S.
Heinke,H.
Hommel,D.
さらに 1 件
掲載資料名:
Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997
シリーズ名:
Materials science forum
シリーズ巻号:
264-268
発行年:
1998
巻:
Part2
開始ページ:
1193
終了ページ:
1196
出版情報:
Zuerich, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878497928 [0878497927]
言語:
英語
請求記号:
M23650
資料種別:
国際会議録

類似資料:

1 国際会議録 MBE Growth of GaN on NdGaO3(101)

Fechtmann, C., Kirchner, V., Einfeldt, S., Heinke, H., Hommel, D., Lukasiewicz, T., Luczynski, Z., Baranowski, J.

MRS - Materials Research Society
7 国際会議録 Deep Trap Characterization in GaN Using Thermal and Optical Admittance Spectroscopy

KrTschil, A., Witte, H., Lisker, M., Christen, J., Birkle, U., Einfeldt, S., Hommel, D., Topf, M., Meyer, B. K.

MRS - Materials Research Society
2 国際会議録 Plasma assisted MBE growth and characterizations of GaN

Tu, L.-W., Lee, K.-H., Lai, C.-M., Hsu, M.-K., Chen, W.-S., Liu, C.-S., Lo, I., Tsai, J.-K., Ho, P.-C., Hsieh, K.-Y., …

SPIE-The International Society for Optical Engineering
8 国際会議録 Plasma-Assisted MBE of GaN and AlGaN on 6H SiC(0001)

Sinharoy, S., Agarwal, A. K., Augustine, G., Rowland, L. B., Messham, R. L., Driver, M. C., Hopkins, R. H.

MRS - Materials Research Society
3 国際会議録 Studies on Carbon as Alternative p-Type Dopant for Gallium Nitride

Birkle, U., Fehrer, M., Kirchner, V., Einfeldt, S., Hommel, D., Strauf, S., Michler, P., Gutowski, J.

MRS - Materials Research Society
9 国際会議録 Investigation of Green Emitting Monolithic II-VI Vertical Cavity Surface Emitting Laser

Kruse, C., Alexe, G., Kroger, R., Klude, M., Heinke, H., Hommel, D., Ulrich, S., Michler, P., Gutowski, J.

Materials Research Society
4 国際会議録 Thermal expansion of GaN at low temperatures - a comparison of bulk and homo- and heteroepitaxial layers

Kirchner, V., Heinke, H., Einfeldt, S., Hommel, D., Domagala, J. Z., Leszczynski, M.

MRS-Materials Research Society
10 国際会議録 NH3 as Nitrogen Source in MBE Growth of GaN

Kamp, M., Mayer, M., Pelzmann, A., Thies, A., Chung, H. Y., Sternschulte, H., Marti, O., Ebeling, K. J.

MRS - Materials Research Society
5 国際会議録 Influence of Doping on the Lattice Dynamics of Gallium Nitride

Kaschner, A., Siegle, H., Hoffmann, A., Thomsen, C., Birkle, U., Einfeldt, S., Hommel, D.

MRS - Materials Research Society
11 国際会議録 Optical Admittance Spectroscopy of Deep Centers in Galliunrnitride-Correlation with Photoluminescence

Krtschil,A., Fischer,P., Witte,H., Lisker,M., Christen,J., Birkle,U., Einfeldt,S., Hommel,D.

Trans Tech Publications
6 国際会議録 Plasma-Assisted MBE Growth of GaN on GaN/Sapphire Templates Grown In Situ by Ammonia- MBE

Tang, H., Rolfe, S., Beaulieu, M., Sproule, I., Haffouz, S., Web, J.

Electrochemical Society
12 国際会議録 Growth of GaN on Porous SiC Substrates by Plasma-Assisted Molecular Beam Epitaxy

Inoki, C.K., Kuan, T.S., Lee, C.D., Sagar, Ashutosh, Feenstra, R.M.

Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12