MOCVD Growth and Propertics of InGaN/GaN Multi-Quantum Wells
- 著者名:
Keller,S. Abare,A.C. Minsky,M.S. Wu,X.H. Mack,M.P. Speck,J.S. Hu,E. Coldren,L.A. Mishra,U.K. DenBaars,S.P. - 掲載資料名:
- Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997
- シリーズ名:
- Materials science forum
- シリーズ巻号:
- 264-268
- 発行年:
- 1998
- 巻:
- Part2
- 開始ページ:
- 1157
- 終了ページ:
- 1160
- 出版情報:
- Zuerich, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878497928 [0878497927]
- 言語:
- 英語
- 請求記号:
- M23650
- 資料種別:
- 国際会議録
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10
国際会議録
Influence of Si-Doping on Carrier Localization of MOCVD-Grown InGaN/GaN Multiple Quantum Wells
MRS - Materials Research Society |
Materials Research Society |
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SPIE - The International Society for Optical Engineering |