Generation Mechanisms of Trapped Charges in Oxide Layers of 6H-SiC MOS Structures Irradiated with Gamma-Rays
- 著者名:
Yoshikawa,M. Saitoh,K. Ohshima,T. Itoh,H. Nashiyama,I. Takahashi,Y. Ohnishi,K. Okumura,H. Yoshida,S. - 掲載資料名:
- Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997
- シリーズ名:
- Materials science forum
- シリーズ巻号:
- 264-268
- 発行年:
- 1998
- 巻:
- Part2
- 開始ページ:
- 1017
- 終了ページ:
- 1020
- 出版情報:
- Zuerich, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878497928 [0878497927]
- 言語:
- 英語
- 請求記号:
- M23650
- 資料種別:
- 国際会議録
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1
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EFFECTS OF GAMMA-RAY IRRADIATION AND THERMAL ANNEALING ON CHARACTERISTICS OF 3C-SiC MOS STRUCTURE
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