1400 V 4H-SiC Power MOSFETs

1400 V 4H-SiC Power MOSFETs

著者名:

掲載資料名:

Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997

シリーズ名:

Materials science forum

シリーズ巻号:

264-268

発行年:

1998

巻:

Part2

開始ページ:

989

終了ページ:

992

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878497928 [0878497927]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00020694
シリーズID:	PA00000012
会議名:	ICSCIII-N : International Conference on Silicon Carbide, III-Nitrides Related Materials
回次:	1997 : 7th
会議開催地:	Stockholm, Sweden
会議開催年:	1997.09.00

類似資料:

1 国際会議録 4H-SiC Gate Turn-Off(GTO)Thyristor Development Casady,J.B., Agarwal,A.K., Rowland,L.B., Siergiej,R.R., Seshadri,S., Mani,S., Barrows,J., Piceone,D., Sanger,P.A., … Trans Tech Publications	7 国際会議録 Nitrogen Doping Efficiency During Vapor Phase Epitaxy of 4H-SiC Rowland,L.B., ,A.A.Burk.Jr., Brandt,C.D. Trans Tech Publications
2 国際会議録 4H-SiC Power Devices: Comparative Overview of UMOS, DMOS, and GTO Device Structures Casady, J. B., Agarwal, A. K., Rowland, L. B., Seshadri, S., Siergiej, R. R., Mani, S. S., Sheridan, D. C., Sanger, P. … MRS - Materials Research Society	8 国際会議録 4H-SiC DMOSFETs Processed Using Graphite Capped Implant Activation Anneal Fedison, J.B., Cowen, C.S., Garrett, J.L., Downey, E.T., Kretchmer, J.W., Klinger, R.L., Peters, H.C., Tucker, J.B., … Trans Tech Publications
3 国際会議録 Influence of Buffer Layer on DC and RF Performance of 4H SiC MESFET Los, A.V., Mazzola, M.S., Kajfez, D., McDaniel, B.T., Smith, C.E., Kretchmer, J., Rowland, L.B., Casady, J.B. Trans Tech Publications	9 国際会議録 Demonstration of Deep (80 μm) RIE Etching of SiC for MEMS and MMIC Applications Sheridan, D. C., Casady, J. B., Ellis, E. C., Siergiej, R. R., Cressler, J. D., Strong, R. M., Urban, W. M., Valek, W. … Trans Tech Publications
4 国際会議録 Critical Materials, Device Design, Performance and Reliability Issues in 4H-SiC Power UMOSFET Structures Agarwal, A. K., Siergiej, R. R., Seshadri, S., White, M. H., McMullin, P. G., Burk, A. A., Rowland, L. B., Brandt, C. … MRS - Materials Research Society	10 国際会議録 Propagation of Current-Induced Stacking Faults and Forward Voltage Degradation in 4H-SiC PiN Diodes Stahlbush, R., Fedison, J.B., Arthur, S.D., Rowland, L.B., Kretchmer, J.W., Wang, S. Trans Tech Publications
5 国際会議録 Electrical Instability Suppression in 4H-SiC Power MESFETs Tucker, J.B., Beaupre, R.A., Zhang, A.P., Garrett, J.L., Rowland, L.B., Kaminsky, E.B., Kretchmer, J.W., Vertiatchikh, … Materials Research Society	11 国際会議録 First Demonstration of 2.1 kW Output Power at 425 MH2 Using 4H-SiC RF Power BJTs Agarwal, A.K, Husna, F., Haley, J., Bartlow, H., McCalpin, B., Krishnaswami, S., Capell, C., Ryu, S.H., Palmour, J.W. Trans Tech Publications
6 国際会議録 A Study on the Reliability and Stability of High Voltage 4H-SiC MOSFET Devices Krishnaswami, S., Ryu, S.H., Heath, B., Agarwal, A.K., Palmour, J.W., Geil, B.R., Lelis, A.J., Scozzie, C.J. Trans Tech Publications	12 国際会議録 Propagation of Current-Induced Stacking Faults and Forward Voltage Degradation in 4H-SiC PiN Diodes Stahlbush, R.E., Fedison, J.B., Arthur, S.D., Rowland, L.B., Kretchmer, J.W., Wang, S. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12