Study of Thermal Annealing of Vacancies in Ion Implanted 3C-SiC by Positron Annihilation
- 著者名:
Ohshima,T. Uedono,A. Itoh,H. Abe,K. Suzuki,R. Ohdaira,T. Aoki,Y. Yoshikawa,M. Mikado,T. Okumura,H. Yoshida,S. Tanigawa,S. Nashiyama,I. - 掲載資料名:
- Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997
- シリーズ名:
- Materials science forum
- シリーズ巻号:
- 264-268
- 発行年:
- 1998
- 巻:
- Part2
- 開始ページ:
- 745
- 終了ページ:
- 748
- 出版情報:
- Zuerich, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878497928 [0878497927]
- 言語:
- 英語
- 請求記号:
- M23650
- 資料種別:
- 国際会議録
類似資料:
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Materials Research Society |
MRS - Materials Research Society |
Trans Tech Publications |
MRS - Materials Research Society |
5
国際会議録
EFFECTS OF GAMMA-RAY IRRADIATION AND THERMAL ANNEALING ON CHARACTERISTICS OF 3C-SiC MOS STRUCTURE
Materials Research Society |
MRS - Materials Research Society |
Trans Tech Publications |
Trans Tech Publications |