Acceptor-Hydrogen Interaction in Ternary III-V Semiconductors
- 著者名:
Burchard,A. ( the ISOLDE-Collaboration ) Deicher,M. Forkel-Wirth,D. Freidinger,J. Kerle,T. Magerle,R. Pfeiffer,W. Prost,W. Wellmann,P. Winnacker,A. - 掲載資料名:
- Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995
- シリーズ名:
- Materials science forum
- シリーズ巻号:
- 196-201
- 発行年:
- 1995
- パート:
- 2
- 開始ページ:
- 987
- 終了ページ:
- 991
- 出版情報:
- Zurich, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878497164 [0878497161]
- 言語:
- 英語
- 請求記号:
- M23650
- 資料種別:
- 国際会議録
類似資料:
Trans Tech Publications |
MRS - Materials Research Society |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
MRS - Materials Research Society |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
12
国際会議録
The role of caiion vacancy in compensation of II-VI compounds by fast diffusors-example of Cu in CdS
Trans Tech Publications |