Positron Mobility and Interface Defect Studies in Semi-Insulating GaAs Using the Lifetime Technique

Positron Mobility and Interface Defect Studies in Semi-Insulating GaAs Using the Lifetime Technique

著者名:

掲載資料名:

Positron annihilation : ICPA-10 : Proceedings of the 10th International Conference on Positron Annihilation, May 23-29, 1994, Beijing, China

シリーズ名:

Materials science forum

シリーズ巻号:

175-178

発行年:

1995

巻:

Part1

開始ページ:

517

終了ページ:

520

出版情報:

Aederlmannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878496860 [0878496866]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00020689
シリーズID:	PA00000012
会議名:	International Conference on Positron Annihilation
回次:	10th
会議開催地:	Beijing, China
会議開催年:	1994.05.23-1994.05.29

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