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EFFECTS OF 450｡？THERMAL ANNEALING UPON OXYGEN PRECIPITATION IN B-DOPED CZ Si WAFERS.

著者名:
HAHN,S.
SHATAS,S.
STEIN,H.J.
ARST,M.
SADANA,D.K.
REK,Z.U.
STOJANOFF,V.
さらに 2 件
掲載資料名:
Defects in Semiconductors : Proceedings of the 14th International Conference on Defects in Semiconductors, ICDS-14, Paris, France, August 18-22, 1986
シリーズ名:
Materials science forum
シリーズ巻号:
10-12
発行年:
1986
巻:
Part3
開始ページ:
975
終了ページ:
978
出版情報:
Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878495511 [0878495517]
言語:
英語
請求記号:
M23650
資料種別:
国際会議録

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