Blank Cover Image

IDENTIFICATION OF THE CARBON ASSOCIATED RADIATION DAMAGE LEVELS IN SILICON.

著者名:
掲載資料名:
Defects in Semiconductors : Proceedings of the 14th International Conference on Defects in Semiconductors, ICDS-14, Paris, France, August 18-22, 1986
シリーズ名:
Materials science forum
シリーズ巻号:
10-12
発行年:
1986
巻:
Part3
開始ページ:
947
終了ページ:
951
出版情報:
Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878495511 [0878495517]
言語:
英語
請求記号:
M23650
資料種別:
国際会議録

類似資料:

1 国際会議録 Interpretation of the Electric Field Dependent Thermal Emission Data of Deep Traps

Pavelka,T., Ferenczi,G.

Trans Tech Publications
7 国際会議録 Carrier Lifetime Measurements in Silicon for Photovoltaic Applications

T. Pavelka, A. Pap, G. Szilagyi

Electrochemical Society
2 国際会議録 ANALYSIS OF HIGH-DOSE IMPLANTED SILICON BY HIGH-DEPTH RESOLUTION RBS AND SPECTROSCOPIC ELLIPSOMETRY AND TEM

Lohner, T., Mezey, G., Fried, M., Ghita, L., Ghita, C., Mertens, A., Kerkow, H., Kotai, E., Paszti, F., Banyai, F., …

Materials Research Society
8 国際会議録 Observation of a configurationally unstable defect in Si

Londos,C.A.

Trans Tech Publications
3 国際会議録 Effect of high-pressure high-temperature treatment on neutron-irradiation-induced defects in Czochralski silicon

Londos,C.A., Fytros,L.G., Misiuk,A., Bak-Misiuk,J., Prujszczyk,M., Potsidou,M.

SPIE-The International Society for Optical Engineering
9 国際会議録 CHARACTERIZATION OF DEEP LEVELS BY MICROWAVE ABSORPTION SPECTOROSCOPY.

FERENCZI,G., HUBER,D.

Trans Tech Publications
4 国際会議録 Peculiarities of the thermal donor formation in Czochralski-grown silicon under high hydrostatic pressure

Emtsev,V.V., Oganesyan,G.A., Misiuk,A., Londos,C.A.

SPIE-The International Society for Optical Engineering
10 国際会議録 Proton radiation damage in high-resistivity n-type silicon CCDs

Bebek, C.J., Groom, D.E., Holland, S.E., Karcher, A., Kolbe, W.F., Lee, J.S., Levi, M.E., Palaio, N.P., Turko, B.T., …

SPIE-The International Society for Optical Engineering
5 国際会議録 Diffusivities and solubilities of various elements in silicon

Londos. A. C

Kluwer Academic Publishers
11 国際会議録 The Kinetics of Oxygen Loss and Thermal Donor Formation in Silicon at Temperatures between 350°C and 500°C

McQuaid,S.A., Londos,C.A., Binns,M.J., Newman,R.C., Tucker,J.H.

Trans Tech Publications
6 国際会議録 Electrical characteristics of SOI-like structures formed in nitrogen or oxygen implanted silicon treated under high pressure

Antonova, I.V., Misiuk, A., Londos, C.A.

Electrochemical Society
12 国際会議録 IDENTIFICATION OF INTERSTITIAL CARBON RELATED DEFECTS IN SILICON

Benton, J. L., Asom, M. T., Sauer, R., Kimerling, L. C.

Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12