Blank Cover Image

GaN-based LEDs grown by molecular beam epitaxy (Invited Paper)

著者名:
Averbeck,R. ( Siemens AG (FRG) )
Graber,A. ( Univ.Giessen (FRG) )
Tews,H. ( Siemens AG (FRG) )
Bernklau,D. ( Siemens AG (FRG) )
Barnhofer,U. ( Technical Univ.Munich (FRG) )
Riechert,H. ( Siemens AG (FRG) )
さらに 1 件
掲載資料名:
Light-Emitting Diodes: Research, Manufacturing, and Applications II
シリーズ名:
Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号:
3279
発行年:
1998
開始ページ:
28
終了ページ:
35
出版情報:
Bellingham, Wash.: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819427182 [0819427187]
言語:
英語
請求記号:
P63600/3279
資料種別:
国際会議録

類似資料:

1 国際会議録 Optical Characterization of InGaN Layers and GaN/InGaN/GaN Double Heterostructures

Graber,A., Averbeck,R., Barnhofer,U., Riechert,H., Tews,H.

Trans Tech Publications
7 国際会議録 Microstructral investigations on GaN films grown by laser induced molecular beam epitaxy

Zhou, H., Phillipp, R., Gross, M., Schroder, H.

MRS-Materials Research Society
2 国際会議録 MBE Growth of (In)GaN for LED Applications

Riechert, H., Averbeck, R., Graber, A., Schienle, M., Strauss, U., Tews, H.

MRS - Materials Research Society
8 国際会議録 Photoconducting ultraviolet detectors based on GaN films grown by electron cyclotron resonance molecular beam epitaxy

M. Misra, T.D. Moustakas, R.P. Vaudo, R. Singh, K.S. Shah

Society of Photo-optical Instrumentation Engineers
3 国際会議録 Correlation between structural properties and optical amplification in InGaN/GaN heterostructures grown by molecular beam epitaxy

Kaschner, A., Holst, J., Gfug, U. von, Hoffmann, A., Bertram, F., Riemann, T., Rudloff, D., Fischer, P., Christen, J., …

MRS-Materials Research Society
9 国際会議録 Raman Studies on Oxygen Doped GaN Grown by Molecular Beam Epitaxy

Papadimitriou, D., Ptak, A.J., Korakakis, D., Giles, N.C., Myers, T.H.

Materials Research Society
4 国際会議録 MBE Growth of High Peformance GaAs/Ga AlAs and In GaAs/Ga AlAs Double Barrier Quantum Well Structures for Resonant Tunneling Devices

Riechert H., Bernklau D., Reithmaier P. J., Schnell D. R.

Plenum Press
10 国際会議録 Er-doped GaN Grown By Molecular Beam Epitaxy

Ng, H.M

Electrochemical Society
5 国際会議録 Photoluminescence Of GaN Grown By Molecular Beam Epitaxy On Freestanding GaN Template

Reshchikov, M.A., Yun, F., Huang, D., He, L., Morkoc, H., Park, S.S., Lee, K.Y.

Materials Research Society
11 国際会議録 High-quality GaN grown by molecular beam epitaxy on Ge(001)

Siegle, H., Kim, Y., Sudhir, G. S., Kruger, J., Perlin, P., Ager III, J. W., Kisielowski, C., Weber, E. R.

MRS-Materials Research Society
6 国際会議録 Two-dimensional growth and structural characterization of oxide ceramic thin films grown by laser molecular beam epitaxy (Invited Paper)

Yang,G., Lu,H., Cui,D., Wang,H., Zhou,Y., Chen,Z.

SPIE-The International Society for Optical Engineering
12 国際会議録 Normal and Inverted AlGaN/GaN Based Piezoelectric Field Effect Transistors Grown by Plasma Induced Molecular Beam Epitaxy

Murphy, M. J., Foutz, B. E., Chu, K., Wu, H., Yeo, W., Schaff, W. J., Ambacher, O., Eastman, L. F., Eustis, T. J., …

MRS - Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12