Blank Cover Image

Isotropic nitride etching for thin nitride barrier self-aligned contact (TNBSAC) in an inductively coupled plasma chemical etcher

著者名:
  • Kim,J.-H ( Hyundai Electronics Industries Co.,Ltd. (Korea) )
  • Ryu,J.-O. ( Hyundai Electronics Industries Co.,Ltd. (Korea) )
  • Kim,J.-S. ( Hyundai Electronics Industries Co.,Ltd. (Korea) )
  • Kim,J.-W. ( Hyundai Electronics Industries Co.,Ltd. (Korea) )
  • Seol,Y.-S ( Hyundai Electronics Industries Co.,Ltd. (Korea) )
掲載資料名:
Process, Equipment, and Materials Control in Integrated Circuit Manufacturing IV
シリーズ名:
Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号:
3507
発行年:
1998
開始ページ:
181
終了ページ:
189
出版情報:
Bellingham, Wash.: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819429667 [081942966X]
言語:
英語
請求記号:
P63600/3507
資料種別:
国際会議録

類似資料:

1 国際会議録 Thin Nitride Barrier Self-Aligned Contact (TNBSAC) Oxide Etching in a High Density Inductively Coupled Plasma Using C4F8/CH3F/Ar Chemistry

Kim, J-H., Ryu, J-O., Kim, J-S., Lee, B-C., Kim, J-W., Seol, Y-S.

Electrochemical Society
7 国際会議録 Inductively Coupled Plasma Etching of Pb(ZrxTil-x)O3 Thin Films In Cl2C2F6 and HBr Plasmas

Chung, C.W., Byun, Y.H., Kim, H.I.

Electrochemical Society
2 国際会議録 COMPARISON OF IN SITU, ISOTROPIC DOWNSTREAM, AND INDUCTIVELY COUPLED PLASMA DOWNSTREAM POST-CONTACT ETCH CLEANING

Mikulan, P.I., Koo, T.T., Fonash, S.J., Reinhardt, K.A.

Electrochemical Society
8 国際会議録 Inductively Coupled Plasma Etching of III-Nitrides in Cl2/Xe, Cl2/Ar and Cl2/He

Cho, H., Hahn, Y. B., Hays, D. C., Jung, K. B., Donovan, S. M., Abernathy, C. R., Pearton, S. J., Shul, R. J.

MRS - Materials Research Society
3 国際会議録 Etch Characteristics of GaN Using Inductively-Coupled Cl2/HBr and Cl2/Ar Plasmas

Kim, H. S., Lee, Y. J., Lee, Y. H., Lee, J. W., Yoo, M. C., Kim, T. I., Yeom, G. Y.

MRS - Materials Research Society
9 国際会議録 Fluorocarbon Ions in Oxide Contact Etching with CF4/Ar Plasma

Choi, C-J., Kwon, O-S., Seol, Y-S.

Electrochemical Society
4 国際会議録 ICP (inductively coupled plasma) dry etch of DUV MoSi HTPSM

Lee, K. Y., Kim, L. J., Nam, K. -H., Park, K. T., Ku, Y. M., Ku, S. S., Hur, I. B.

SPIE - The International Society of Optical Engineering
10 国際会議録 Simulation of Plasma Etch Process Control on Etching Time-Scales: Multi-Coil Control of an Inductively Coupled Plasma Source

Yang, J., Yamada, N., Ventzek, P.L.G., Sakai, Y., Date, H., Tagashira, H., Kitamori, K.

Electrochemical Society
5 国際会議録 Characteristics of an Inductively Coupled C12/Ar Plasma and its Application to Cu Etching

Seo, S-H., Kim, J-H., Lee, P-W., Chang, H-Y.

Electrochemical Society
11 国際会議録 Etch Induced Damage in High Density Inductively Coupled Plasma Etching Reactor

Zhong, W., Misra, D., Bartynski, R.A., Patel, V., Singh, B.

Electrochemical Society
6 国際会議録 Fabrication of Group III-Nitride Waveguides by Inductively Coupled Plasma Etching

Li, N., Waki, I., Kumtornkittikul, C., Liang, J.-H., Sugiyama, M., Shimogaki, Y., Nakano, Y.

Electrochemical Society
12 国際会議録 Study on Etching Mechanism of Al2O3 as a Stopper Layer for Self-Aligned Contact in a High Density Plasma Tool

Park, W.J., Hong, J., Jeon, J.S., Min, G.J., Chi, K.K., Moon, J.T.

Electrochemical Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12