Fast-ion-induced defects in silicon studied by deep level transient spectroscopy

Fast-ion-induced defects in silicon studied by deep level transient spectroscopy

著者名:

掲載資料名:

Materials modification by high-fluence ion beams

シリーズ名:

NATO ASI series. Series E, Applied sciences

シリーズ巻号:

155

発行年:

1989

開始ページ:

231

終了ページ:

236

総ページ数:

6

出版情報:

Dordrecht, The Netherlands: Kluwer Academic Publishers

ISSN:

0168132X

ISBN:

9780792300359 [0792300351]

言語:

英語

請求記号:

N11482/155

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00020564
シリーズID:	PA00000018
会議名:	NATO Advanced Study Institute on Materials Modification by High-fluence Ion Beams
回次:	1987
会議開催地:	Viana do Castelo, Portugal
会議開催年:	1987.08.24-1987.09.04

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