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High-quality LEO growth and characterization of GaN films on AI2O3 and Si substrates

著者名:
掲載資料名:
Epilayers and heterostructures in optoelectronics and semiconductor technology : International Conference on Solid State Crystals '98 : 12-16 October 1998, Zakopane, Poland
シリーズ名:
Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号:
3725
発行年:
1999
開始ページ:
14
終了ページ:
20
出版情報:
Bellingham, Wash.: SPIE - The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819431998 [0819431990]
言語:
英語
請求記号:
P63600/3725
資料種別:
国際会議録

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