Correlation of carrier lifetimes and arsenic-antisite defects in LT-GaAs grown at different substrate temperatures

Correlation of carrier lifetimes and arsenic-antisite defects in LT-GaAs grown at different substrate temperatures

著者名:

Lin,G.-R. ( Tatung Institute of Technology )
Liu,T.-A.
Pan,C.-L.

掲載資料名:

Ultrafast phenomena in semiconductors III : 27-29 January, 1999, San Jose, California

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

3624

発行年:

1999

開始ページ:

50

終了ページ:

56

出版情報:

Bellingham, Wash.: SPIE - The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819430946 [0819430943]

言語:

英語

請求記号:

P63600/3624

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00020392
シリーズID:	PA00000029
会議名:	Photonics West : Ultrafast Phenomena in Semiconductors
回次:	1999 : 3rd
会議開催地:	San Jose, CA, USA
会議開催年:	1999.01.27-1999.01.29

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